公开(公告)号：US09437604B2

公开(公告)日：2016-09-06

申请号：US14069553

申请日：2013-11-01

Applicant: Micron Technology, Inc.

Inventor： Zhenyu Lu ,  Roger W. Lindsay ,  Andrew Bicksler ,  Yongjun J Hu ,  Haitao Liu

IPC: H01L21/336 ,  H01L27/115 ,  H01L29/66 ,  H01L29/792

CPC classification number: H01L27/11556 ,  H01L23/5283 ,  H01L27/11524 ,  H01L29/456 ,  H01L29/66825 ,  H01L29/7926

Abstract: Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of memory cells comprises forming a metal silicide source material over a substrate. The metal silicide source material is doped. A vertical string of memory cells is formed over the metal silicide source material. A semiconductor material is formed vertically and adjacent to the vertical string of memory cells and coupled to the metal silicide source material.

Abstract translation: 公开了形成一串存储器单元的方法，具有一串存储单元的装置和系统。 一种用于形成存储单元串的方法包括在衬底上形成金属硅化物源材料。 掺杂金属硅化物源材料。 在金属硅化物源材料上形成垂直的存储单元串。 半导体材料垂直地形成并且与垂直的存储单元串相邻并且耦合到金属硅化物源材料。