公开(公告)号：US20080144677A1

公开(公告)日：2008-06-19

申请号：US11611819

申请日：2006-12-15

申请人： Mikhail A. Belkin ,  Benjamin G. Lee ,  Ross M. Audet ,  James B. MacArthur ,  Laurent Diehl ,  Christian Pflugl ,  Federico Capasso

发明人： Mikhail A. Belkin ,  Benjamin G. Lee ,  Ross M. Audet ,  James B. MacArthur ,  Laurent Diehl ,  Christian Pflugl ,  Federico Capasso

IPC分类号： H01S3/10

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  G01N21/1702 ,  G01N21/39 ,  G01N2021/1704 ,  G01N2021/399 ,  H01S5/0612 ,  H01S5/12 ,  H01S5/3401 ,  H01S5/4087

摘要： A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the lasers and, and control the temperature of the lasers in the array. The device can be used in portable broadband sensors to simultaneously detect a large number of compounds including chemical and biological agents. A microelectronic controller is combined with an array of individually-addressed DFB QCLs with slightly different DFB grating periods fabricated on the same broadband (or multiple wavelengths) QCL material. This allows building a compact source providing narrow-line broadly-tunable coherent radiation in the Infrared or Terahertz spectral range (as well as in the Ultraviolet and Visible spectral ranges, using semiconductor lasers with different active region design). The performance (tuning range, line width, power level) is comparable to that of external grating tunable semiconductor lasers, but the proposed design is much smaller and much easier to manufacture.

摘要翻译： 基于半导体激光器的广泛可调单模红外激光源。 激光源具有两部分：紧密间隔的DFB QCL（或其他半导体激光器）的阵列以及能够切换阵列中各个激光器的每个开关的控制器，为每个激光器设置电流和控制 阵列中的激光器的温度。 该装置可用于便携式宽带传感器中以同时检测大量包括化学和生物试剂在内的化合物。 微电子控制器与在相同宽带（或多波长）QCL材料上制造的具有稍微不同的DFB光栅周期的单独寻址的DFB QCL阵列组合。 这样可以在红外或太赫兹光谱范围（以及使用具有不同有源区域设计的半导体激光器的紫外和可见光谱范围）中构建一个紧凑的源，提供窄线宽可调谐相干辐射。 性能（调谐范围，线宽，功率水平）与外部光栅可调谐半导体激光器的性能相当，但所提出的设计要小得多，制造容易得多。

公开(公告)号：US07826509B2

公开(公告)日：2010-11-02

申请号：US11611819

申请日：2006-12-15

申请人： Mikhail A. Belkin ,  Benjamin G. Lee ,  Ross M. Audet ,  James B. MacArthur ,  Laurent Diehl ,  Christian Pflügl ,  Federico Capasso

发明人： Mikhail A. Belkin ,  Benjamin G. Lee ,  Ross M. Audet ,  James B. MacArthur ,  Laurent Diehl ,  Christian Pflügl ,  Federico Capasso

IPC分类号： H01S5/00 ,  H01S3/10 ,  H01S3/13

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  G01N21/1702 ,  G01N21/39 ,  G01N2021/1704 ,  G01N2021/399 ,  H01S5/0612 ,  H01S5/12 ,  H01S5/3401 ,  H01S5/4087

摘要： A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the lasers and, and control the temperature of the lasers in the array. The device can be used in portable broadband sensors to simultaneously detect a large number of compounds including chemical and biological agents. A microelectronic controller is combined with an array of individually-addressed DFB QCLs with slightly different DFB grating periods fabricated on the same broadband (or multiple wavelengths) QCL material. This allows building a compact source providing narrow-line broadly-tunable coherent radiation in the Infrared or Terahertz spectral range (as well as in the Ultraviolet and Visible spectral ranges, using semiconductor lasers with different active region design). The performance (tuning range, line width, power level) is comparable to that of external grating tunable semiconductor lasers, but the proposed design is much smaller and much easier to manufacture.

摘要翻译： 基于半导体激光器的广泛可调单模红外激光源。 激光源具有两部分：紧密间隔的DFB QCL（或其他半导体激光器）的阵列和能够切换阵列中的每个激光器的每一个的开关的控制器，为每个激光器设置电流和控制 阵列中的激光器的温度。 该装置可用于便携式宽带传感器中以同时检测大量包括化学和生物试剂在内的化合物。 微电子控制器与在相同宽带（或多波长）QCL材料上制造的具有稍微不同的DFB光栅周期的单独寻址的DFB QCL阵列组合。 这样可以在红外或太赫兹光谱范围（以及使用具有不同有源区域设计的半导体激光器的紫外和可见光谱范围）中构建一个紧凑型源，提供窄线宽可调谐相干辐射。 性能（调谐范围，线宽，功率水平）与外部光栅可调谐半导体激光器的性能相当，但所提出的设计要小得多，制造容易得多。