公开(公告)号：US20130221313A1

公开(公告)日：2013-08-29

申请号：US13452544

申请日：2012-04-20

申请人： Ming-Daou LEE ,  ChiaHua HO ,  Cho-Lun HSU ,  Wen-Cheng CHIU

发明人： Ming-Daou LEE ,  ChiaHua HO ,  Cho-Lun HSU ,  Wen-Cheng CHIU

IPC分类号： H01L45/00 ,  H01L21/8239

CPC分类号： H01L45/00 ,  H01L27/1052 ,  H01L27/2472 ,  H01L45/146

摘要： The present invention discloses an ultra high density resistive memory structure and a method for fabricating the same. The memory structure comprises a plurality of memory cells. Each memory cell further comprises two separate upper sub-electrodes fabricated from an upper electrode, two separate lower sub-electrodes fabricated from a lower electrode and intersecting the upper sub-electrodes, and a resistive layer arranged between the upper sub-electrodes and the lower sub-electrodes. Thereby, four sub-memory cells are formed in the intersections of the two upper sub-electrodes, the two lower sub-electrodes, and the resistive layer. Thus is increased the density of a memory structure in an identical area.

摘要翻译： 本发明公开了一种超高密度电阻式存储器结构及其制造方法。 存储器结构包括多个存储单元。 每个存储单元还包括由上电极制成的两个分离的上子电极，由下电极制造的两个分开的下子电极并且与上子电极相交，以及布置在上子电极和下电极之间的电阻层 子电极。 由此，在两个上部子电极，两个下部子电极和电阻层的交叉点形成四个子存储单元。 从而增加了存储器结构在相同区域中的密度。