公开(公告)号：US08952456B2

公开(公告)日：2015-02-10

申请号：US12711302

申请日：2010-02-24

Applicant: Ming-Do Ker ,  Chun-Yu Lin

Inventor： Ming-Do Ker ,  Chun-Yu Lin

IPC: H01L23/62 ,  H01L27/02

CPC classification number: H01L27/0262

Abstract: A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.

Abstract translation: 代表性静电放电（ESD）保护电路包括可控硅整流器，其包括第一P型半导体材料，第一N型半导体材料，第二P型半导体材料和第二N型半导体材料的交替布置 电耦合在阳极和阴极之间的材料。 阳极电耦合到第一P型半导体材料，并且阴极电耦合到第二N型半导体材料。 ESD保护电路还包括电耦合在阳极和第二P型半导体材料之间或在阴极和第一N型半导体材料之间的电感器。