ELECTROSTATIC DISCHARGE CIRCUIT USING INDUCTOR-TRIGGERED SILICON-CONTROLLED RECTIFIER
    1.
    发明申请
    ELECTROSTATIC DISCHARGE CIRCUIT USING INDUCTOR-TRIGGERED SILICON-CONTROLLED RECTIFIER 有权
    使用电感触发式硅控制整流器的静电放电电路

    公开(公告)号:US20110207409A1

    公开(公告)日:2011-08-25

    申请号:US12711302

    申请日:2010-02-24

    IPC分类号: H04B1/00 H01L27/06 H01L23/60

    CPC分类号: H01L27/0262

    摘要: A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.

    摘要翻译: 代表性静电放电(ESD)保护电路包括可控硅整流器,其包括第一P型半导体材料,第一N型半导体材料,第二P型半导体材料和第二N型半导体材料的交替布置 电耦合在阳极和阴极之间的材料。 阳极电耦合到第一P型半导体材料,并且阴极电耦合到第二N型半导体材料。 ESD保护电路还包括电耦合在阳极和第二P型半导体材料之间或在阴极和第一N型半导体材料之间的电感器。

    Electrostatic discharge circuit using inductor-triggered silicon-controlled rectifier
    2.
    发明授权
    Electrostatic discharge circuit using inductor-triggered silicon-controlled rectifier 有权
    使用电感触发硅控整流器的静电放电电路

    公开(公告)号:US08952456B2

    公开(公告)日:2015-02-10

    申请号:US12711302

    申请日:2010-02-24

    IPC分类号: H01L23/62 H01L27/02

    CPC分类号: H01L27/0262

    摘要: A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.

    摘要翻译: 代表性静电放电(ESD)保护电路包括可控硅整流器,其包括第一P型半导体材料,第一N型半导体材料,第二P型半导体材料和第二N型半导体材料的交替布置 电耦合在阳极和阴极之间的材料。 阳极电耦合到第一P型半导体材料,并且阴极电耦合到第二N型半导体材料。 ESD保护电路还包括电耦合在阳极和第二P型半导体材料之间或在阴极和第一N型半导体材料之间的电感器。