公开(公告)号：US5998234A

公开(公告)日：1999-12-07

申请号：US825456

申请日：1997-03-28

申请人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

发明人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

IPC分类号： G01P15/12 ,  H01L21/301 ,  H01L21/78 ,  H01L29/06 ,  H01L29/84 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/78 ,  H01L2224/16 ,  H01L29/0657 ,  H01L2924/01019 ,  H01L2924/10158 ,  H01L2924/10253

摘要： On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.

摘要翻译： 在切割之前的硅晶片的背面上，具有倾斜侧壁的锥形槽通过各向异性蚀刻以及薄的部分形成。 应变计形成在每个薄部分上，从而在硅晶片上形成传感器芯片。 硅晶片的背面安装在自粘座上。 此后，通过切割刀片沿着沟槽切割硅晶片，以将其划分成每个传感器芯片。 在切割中，切割刀片的侧面切割锥形槽的倾斜侧壁。 结果，将硅晶片切割成没有裂纹和碎屑的单独的传感器芯片。