公开(公告)号：US20240154390A1

公开(公告)日：2024-05-09

申请号：US18574646

申请日：2021-07-09

申请人： Mitsubishi Electric Corporation

发明人： Takaya MORIKAWA ,  Kosuke SHINOHARA

IPC分类号： H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01S5/2231 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/34353

摘要： A semiconductor optical element of the present disclosure includes: a ridge structure provided on a first-conductivity-type semiconductor substrate and including a first-conductivity-type cladding layer and an active layer; a buried structure provided on both side surfaces of the ridge structure; a second-conductivity-type cladding layer and a second-conductivity-type contact layer provided on a surface of the buried structure; a second-conductivity-type ridge upper cladding layer provided above the ridge structure; a recess having a bottom surface formed of an upper surface of the second-conductivity-type ridge upper cladding layer and side surfaces formed of the second-conductivity-type cladding layer and the second-conductivity-type contact layer; a mesa structure having both side surfaces formed by a mesa extending from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate.