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公开(公告)号：US20240154390A1
公开(公告)日：2024-05-09
申请号：US18574646
申请日：2021-07-09
Applicant: Mitsubishi Electric Corporation
Inventor： Takaya MORIKAWA , Kosuke SHINOHARA
CPC classification number: H01S5/2231 , H01S5/2275 , H01S5/3211 , H01S5/34353
Abstract: A semiconductor optical element of the present disclosure includes: a ridge structure provided on a first-conductivity-type semiconductor substrate and including a first-conductivity-type cladding layer and an active layer; a buried structure provided on both side surfaces of the ridge structure; a second-conductivity-type cladding layer and a second-conductivity-type contact layer provided on a surface of the buried structure; a second-conductivity-type ridge upper cladding layer provided above the ridge structure; a recess having a bottom surface formed of an upper surface of the second-conductivity-type ridge upper cladding layer and side surfaces formed of the second-conductivity-type cladding layer and the second-conductivity-type contact layer; a mesa structure having both side surfaces formed by a mesa extending from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate.
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公开(公告)号：US20240106201A1
公开(公告)日：2024-03-28
申请号：US18534810
申请日：2023-12-11
Inventor： Zhibai ZHONG , Tao YE , Min ZHANG , Shao-Hua HUANG , Shuiqing LI
CPC classification number: H01S5/222 , H01S5/04256 , H01S5/3211 , H01S5/168
Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.
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公开(公告)号：US11870219B2
公开(公告)日：2024-01-09
申请号：US17227534
申请日：2021-04-12
Inventor： Zhibai Zhong , Tao Ye , Min Zhang , Shao-Hua Huang , Shuiqing Li
CPC classification number: H01S5/222 , H01S5/04256 , H01S5/3211 , H01S5/168
Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.
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公开(公告)号：US11817679B2
公开(公告)日：2023-11-14
申请号：US18162063
申请日：2023-01-31
Applicant: NICHIA CORPORATION
Inventor： Takuya Hashimoto
IPC: H01S5/02253 , H01S5/40 , H01S5/024 , H01S5/323 , H01S5/32 , H01S5/02255 , H01S5/02345
CPC classification number: H01S5/4025 , H01S5/02253 , H01S5/02255 , H01S5/02345 , H01S5/02469 , H01S5/323 , H01S5/3211 , H01S5/4018
Abstract: A light emitting device includes: a substrate including a main surface; a first projection positioned on the main surface, the first projection including an upper surface and first and second lateral surfaces, wherein the first lateral surface of the first projection comprises a first reflective part, and the second lateral surface of the first projection comprises a second reflective part; a first laser element positioned on the main surface at a first reflective part side with respect to the first projection, the first laser element being configured to irradiate first laser light to the first reflective part; a second laser element positioned on the main surface at a second reflective part side with respect to the first projection, the second laser element being configured to irradiate second laser light to the second reflective part; and a first optical member bonded to the upper surface of the first projection.
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公开(公告)号：US20230344197A1
公开(公告)日：2023-10-26
申请号：US17640646
申请日：2021-11-11
Applicant: NLIGHT, INC.
Inventor： Manoj KANSKAR
CPC classification number: H01S5/1203 , H01S5/0287 , H01S5/3211
Abstract: Some embodiments may include a semiconductor laser device comprising: an active layer to generate light; a front facet positioned at a first end of said active layer, with an AR coating or PR coating; a rear facet positioned on a second opposite end of said active layer thereby forming a resonator between said front facet and said rear facet; and a first order diffraction grating positioned within said resonator along only a portion of the length of said active layer, wherein the semiconductor laser device is arranged to emit light from both ends, and the diffraction grating has two non-contiguous segments each extending to one of the facets; or a single end, wherein the rear facet is a rear light reflecting facet with an HR-coating. Other embodiments may be disclosed and/or claimed.
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Patent Agency Ranking
公开(公告)号：US20230291177A1
公开(公告)日：2023-09-14
申请号：US18199960
申请日：2023-05-21
Applicant: TRUELIGHT CORPORATION
Inventor： Chien Hung Pan , Cheng Zu Wu
CPC classification number: H01S5/11 , H01S5/1215 , H01S5/124 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:
Λ
=
m
λ
2
∗
n
e
f
f
;
in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:
Λ
=
O
λ
2
∗
n
e
f
f
.
Wherein, Λ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.-
公开(公告)号：US20230238777A1
公开(公告)日：2023-07-27
申请号：US18095891
申请日：2023-01-11
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Melvin McLaurin , James W. Raring , Alexander Sztein , Po Shan Hsu
CPC classification number: H01S5/34333 , H01S5/22 , H01S5/0215 , H01S5/0217 , H01S5/2081 , H01S5/3211 , H01S5/32025 , H01S5/3202 , H01S5/0087 , H01S5/2009 , H01S5/4043
Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
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公开(公告)号：US10050413B2
公开(公告)日：2018-08-14
申请号：US15708531
申请日：2017-09-19
Applicant: LandMark Optoelectronics Corporation
Inventor： Shu-Wei Chiu , Yin-Jie Ma , Wei Lin
CPC classification number: H01S5/3211 , H01S5/1014 , H01S5/162 , H01S5/164 , H01S5/2031 , H01S5/222 , H01S2301/185
Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.
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公开(公告)号：US10014663B1
公开(公告)日：2018-07-03
申请号：US15624934
申请日：2017-06-16
Applicant: TrueLight Corporation
Inventor： Chien Hung Pan , Cheng-Ju Wu
CPC classification number: H01S5/2027 , H01S5/2018 , H01S5/2031 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3219 , H01S5/3235 , H01S5/34306 , H01S5/34313 , H01S2301/18
Abstract: An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.
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公开(公告)号：US20180109076A1
公开(公告)日：2018-04-19
申请号：US15832248
申请日：2017-12-05
Inventor： Toru TAKAYAMA
CPC classification number: H01S5/2206 , G03B21/2033 , H01S5/2009 , H01S5/22 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3406 , H01S5/34333 , H01S2301/173
Abstract: A light emitting element according to the present disclosure includes: a GaN substrate; a first strain correction layer disposed above the GaN substrate and including InxGa1-xN of a first conductivity type where x is greater than 0 and less than or equal to 1; a first low refractive index layer disposed above the first strain correction layer, including In1-a-bGaaAlbN of the first conductivity type, and having relationships of (a/0.98)+(b/0.8)≥1, (a/1.02)+(b/0.85)≤1, and (a/1.03)+(b/0.68)≥1; a first clad layer disposed above the first low refractive index layer, including AlxGa1-xN of the first conductivity type where z is greater than or equal to 0.03 and less than or equal to 0.06, and having a refractive index higher than a refractive index of the first low refractive index layer; and an active layer disposed above the first clad layer.
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