公开(公告)号：US06376347B1

公开(公告)日：2002-04-23

申请号：US09665962

申请日：2000-09-21

申请人： Mitsuhiro Ohmura ,  Masaki Narita

发明人： Mitsuhiro Ohmura ,  Masaki Narita

IPC分类号： H01L213205

CPC分类号： H01L29/66583 ,  H01L21/31138 ,  H01L21/31144 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7833

摘要： Disclosed is a method of making a gate wiring layer, in which a carbon-based layer is patterned by dry etching using a gas that does not etch a gate insulating layer so as to form a gate wiring layer without deteriorating the gate insulating layer and without etching the semiconductor substrate. In forming a gate insulating layer and a gate wiring layer on a semiconductor substrate, a carbon-based layer is formed on a semiconductor substrate, followed by forming a predetermined mask on the layer for patterning the layer. The carbon-based layer is etched by dry etching using an oxygen gas, a carbon monoxide gas or a mixed gas containing an oxygen gas, a nitrogen gas, a carbon monoxide gas and an argon gas and without containing a halogen gas. The etching is selectively stopped by the insulating layer. The insulating layer of, for example, SiO2 is etched by dry etching using a halogen-containing gas, but is scarcely etched by dry etching using an oxygen-containing gas that does not contain a halogen gas.

摘要翻译： 公开了一种制造栅极布线层的方法，其中通过使用不蚀刻栅极绝缘层的气体通过干法蚀刻来对碳基层进行图案化，从而形成栅极布线层而不会使栅极绝缘层恶化，并且没有 蚀刻半导体衬底。 在半导体衬底上形成栅极绝缘层和栅极布线层时，在半导体衬底上形成碳基层，然后在用于图案化层的层上形成预定的掩模。 通过使用氧气，一氧化碳气体或含有氧气，氮气，一氧化碳气体和氩气的混合气体并且不含卤素气体的干蚀刻来蚀刻碳基层。 蚀刻被绝缘层选择性地停止。 通过使用含卤素气体的干蚀刻蚀刻例如SiO 2的绝缘层，但是通过使用不含卤素气体的含氧气体的干蚀刻几乎不蚀刻。