Piezoelectric single crystal device and fabrication method thereof
    1.
    发明授权
    Piezoelectric single crystal device and fabrication method thereof 有权
    压电单晶器件及其制造方法

    公开(公告)号:US07015628B2

    公开(公告)日:2006-03-21

    申请号:US10846681

    申请日:2004-05-17

    IPC分类号: H01L41/04

    摘要: A piezoelectric single crystal device for actively employing the electromechanical coupling factor k31 in the direction orthogonal to the polarization direction is provided. Specifically, with the polarization direction as [001] axis of a pseudocubic system, an angle between the normal direction 1 of the piezoelectric device edge face and the direction n orthogonal to the domain structure within the crystal face including [010] and [100] axes orthogonal to the polarization direction is in the range 0 to 15° or 40 to 50°.

    摘要翻译: 提供了一种用于在与偏振方向正交的方向上主动采用机电耦合因子k 31的压电单晶器件。 具体地说,在假立方体系的[001]轴的偏振方向为压电元件边缘面的法线方向1与在[010]和[100]的晶面内与畴结构正交的方向n之间的角度, 与偏振方向正交的轴的范围为0〜15°或40〜50°。