公开(公告)号：US20240312793A1

公开(公告)日：2024-09-19

申请号：US18606024

申请日：2024-03-15

Applicant: Marko J. Tadjer ,  Travis J. Anderson ,  Francis J. Kub ,  Alan G. Jacobs ,  Noel A. Guardala ,  John D. Brockman ,  John M. Gahl

Inventor： Marko J. Tadjer ,  Travis J. Anderson ,  Francis J. Kub ,  Alan G. Jacobs ,  Noel A. Guardala ,  John D. Brockman ,  John M. Gahl

IPC: H01L21/423 ,  C01G15/00 ,  C30B29/16 ,  C30B33/04 ,  H01L29/24

CPC classification number: H01L21/423 ,  C01G15/00 ,  C30B29/16 ,  C30B33/04 ,  H01L29/24 ,  C01P2002/54 ,  C01P2006/40 ,  C01P2006/88

Abstract: A germanium (Ge)-doped gallium oxide (Ga2O3) semiconductor material and method of making are provided. In embodiments, a method of making the Ge-doped Ga2O3 semiconductor material includes: subjecting a Ga2O3 semiconductor material to neutron irradiation comprising a higher thermal neutron content than fast neutron content, thereby producing a Ge-doped Ga2O3 semiconductor material; and annealing the Ge-doped Ga2O3 semiconductor material at a temperature of at least 700° C. in an atmosphere of nitrogen gas, thereby generating an electrically conductive n-type Ge-doped Ga2O3 semiconductor material.

公开(公告)号：US20240240357A1

公开(公告)日：2024-07-18

申请号：US18289849

申请日：2022-03-10

Applicant: Hitachi Energy Ltd

Inventor： Giovanni ALFIERI ,  Andrei MIHAILA

IPC: C30B33/04 ,  B28D5/00 ,  C30B29/36

CPC classification number: C30B33/04 ,  B28D5/00 ,  C30B29/36

Abstract: A method for producing a silicon carbide substrate (11) comprises providing the silicon carbide substrate (11) and irradiating the silicon carbide substrate (11) with particles (14) out of a group comprising electrons, hydrogen atoms, helium atoms, lithium atoms, beryllium atoms, boron atoms, sodium atoms, magnesium atoms and aluminum atoms. An energy of the particles (14) for irradiation is selected such that a resistivity (p) is increased by the irradiation at least in a part of the silicon carbide substrate (11) and the silicon carbide substrate (11) is semiconducting after irradiation.

公开(公告)号：US11735683B1

公开(公告)日：2023-08-22

申请号：US18169552

申请日：2023-02-15

Applicant: SHANDONG UNIVERSITY ,  YANSHAN UNIVERSITY

Inventor： Chuanzhen Huang ,  Long Tian ,  Hanlian Liu ,  Zhenyu Shi ,  Peng Yao ,  Dun Liu ,  Bin Zou ,  Hongtao Zhu ,  Zhen Wang ,  Minting Wang ,  Jun Wang ,  Longhua Xu ,  Shuiquan Huang ,  Meina Qu ,  Zhengkai Xu ,  Yabin Guan

IPC: H01L31/18 ,  C01G15/00 ,  H01L31/108 ,  H01L31/0224 ,  C30B29/16 ,  C30B33/04 ,  C23C14/02 ,  C23C14/18 ,  C23C14/24 ,  C30B33/10 ,  H01L31/032

CPC classification number: H01L31/18 ,  C01G15/00 ,  C23C14/022 ,  C23C14/028 ,  C23C14/18 ,  C23C14/24 ,  C30B29/16 ,  C30B33/04 ,  C30B33/10 ,  H01L31/022408 ,  H01L31/1085 ,  H01L31/032

Abstract: A single-crystal β-Ga2O3 MSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-Ga2O3 substrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-Ga2O3 substrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-Ga2O3 substrate after processing, coating an Au thin film on the surface of the single-crystal β-Ga2O3 substrate; and grinding the surface of the single-crystal β-Ga2O3 substrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-Ga2O3 MSM detector.

公开(公告)号：US20230219818A1

公开(公告)日：2023-07-13

申请号：US18009728

申请日：2021-05-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hitoshi SUMIYA ,  Jin Hwa LEE ,  Minori TERAMOTO

IPC: C01B32/26 ,  C30B33/04 ,  C30B29/04

CPC classification number: C01B32/26 ,  C30B33/04 ,  C30B29/04

Abstract: A synthetic single crystal diamond containing nitrogen atoms at a concentration of 100 ppm or more and 1500 ppm or less based on atom numbers, in which the synthetic single crystal diamond contains aggregates each composed of one vacancy and three substitutional nitrogen atoms present adjacent to the vacancy, and a Raman shift λ′ cm−1 of a peak in a first-order Raman scattering spectrum of the synthetic single crystal diamond and a Raman shift λ cm−1 of a peak in a first-order Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a concentration of 1 ppm or less based on atom numbers show a relationship of the following formula 1,


λ′−λ≥0  Formula 1.

公开(公告)号：US20190115489A1

公开(公告)日：2019-04-18

申请号：US16212568

申请日：2018-12-06

Applicant: SUN YAT-SEN UNIVERSITY

Inventor： Feng HUANG ,  Xu JI ,  Mei DONG ,  Kun YAN

IPC: H01L31/18 ,  C30B29/16 ,  C30B33/04 ,  H01L31/0296 ,  H01L31/08 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/1828 ,  C30B29/16 ,  C30B33/04 ,  H01L31/02002 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/085

Abstract: The present invention discloses a high-resistivity single crystal zinc oxide (ZnO) wafer and a high-resistivity single crystal ZnO-based radiation detector, and preparation method and use thereof. The preparation method of the high-resistivity single crystal zinc oxide wafer is to place a single crystal ZnO wafer in a metal lithium electrochemical device for a constant-current discharge treatment, and then to place the single crystal ZnO wafer in a high-pressure oxygen atmosphere at 800 to 1000° C. and 10 to 30 atm for an annealing treatment for 20 to 28 hours. The preparation method of the radiation detector is to evaporate a metal electrode layer at both sides of the high-resistivity single crystal ZnO wafer, then to bond the wafer onto a circuit board, and to connect the wafer with the circuit board by a gold thread.

公开(公告)号：US20180067056A1

公开(公告)日：2018-03-08

申请号：US15686247

申请日：2017-08-25

Applicant: Dusan Simic

Inventor： Dusan Simic

IPC: G01N21/88 ,  C30B29/04 ,  C30B33/02 ,  C30B33/04 ,  G01N21/87 ,  G01N21/64 ,  G09F3/02

CPC classification number: G01N21/8803 ,  C23C14/0611 ,  C23C14/48 ,  C30B29/04 ,  C30B33/02 ,  C30B33/04 ,  G01N21/6447 ,  G01N21/6489 ,  G01N21/87 ,  G09F3/02

Abstract: A synthetic diamond labelling and identification method comprising the steps of selecting a synthetic diamond with between 200 and 600 parts per billion of an isolated substitution Nitrogen atoms within its lattice structure, irradiating the selected synthetic diamond with a beam energy that is equal to at least one-half the height of the selected diamond, maintaining the temperature of the selected diamond below 500 degrees Celsius while it is being irradiated, annealing the irradiated selected diamond as to create a plurality of nitrogen-vacancy centers without changing the original color of the selected diamond, and generating a bulk luminesces visible to the naked eye by exciting the plurality of created nitrogen-vacancies with an ultraviolet lamp.

公开(公告)号：US20180040765A1

公开(公告)日：2018-02-08

申请号：US15783703

申请日：2017-10-13

Applicant: QMAT, Inc.

Inventor： Francois J. HENLEY ,  Sien KANG ,  Mingyu ZHONG ,  Minghang LI

IPC: H01L33/00 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/265 ,  H01L21/04 ,  C30B33/04 ,  C30B29/40 ,  C30B25/18 ,  H01L29/16 ,  C30B25/02

CPC classification number: H01L33/0079 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B33/04 ,  H01L21/0445 ,  H01L21/265 ,  H01L21/31058 ,  H01L21/76254 ,  H01L29/1608 ,  H01L33/007 ,  Y10S117/915

Abstract: Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary. Particular embodiments form template blanks of high quality GaN suitable for manufacturing High Brightness-Light Emitting Diode (HB-LED) devices.

公开(公告)号：US20170306524A1

公开(公告)日：2017-10-26

申请号：US15507539

申请日：2015-11-02

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： ANDREW MICHAEL BENNETT ,  LAURA ANNE HUTTON ,  GEOFFREY ALAN SCARSBROOK

IPC: C30B25/20 ,  C30B33/02 ,  C30B29/04 ,  C23C16/27 ,  B23K26/38 ,  B23K15/08 ,  B23K15/00 ,  B23K26/402 ,  C30B33/04 ,  B23K26/146 ,  B23K103/00

CPC classification number: C30B25/20 ,  B23K15/0006 ,  B23K15/08 ,  B23K26/146 ,  B23K26/38 ,  B23K26/402 ,  B23K2103/50 ,  B28D1/221 ,  C23C16/27 ,  C30B29/04 ,  C30B33/02 ,  C30B33/04 ,  C30B33/06

Abstract: A method of fabricating plates of super-hard material and cutting techniques suitable for such a method. A method of fabricating a plate (14) of super-hard material, the method comprising: • providing a substrate (4) have a lateral dimension of at least 40 mm; • growing a layer of super-hard material on the substrate (4) using a chemical vapour deposition process; and • slicing one or more plates (14) of super-hard material from the substrate using a collimated cutting beam (8), the or each plate of super-hard material (14) having a lateral dimension of at least 40 mm, wherein the collimated cutting beam (8) is collimated with a half angle divergence of no more than 5 degrees.

公开(公告)号：US20170291255A1

公开(公告)日：2017-10-12

申请号：US15475982

申请日：2017-03-31

Applicant: DISCO CORPORATION

Inventor： Kazuya Hirata

IPC: B23K26/00 ,  B28D5/00 ,  B23K26/53 ,  B23K26/03 ,  C30B29/36 ,  C30B33/04

CPC classification number: B23K26/53 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/0823 ,  B23K26/0853 ,  B23K2103/56 ,  B28D5/0011 ,  C30B29/36 ,  C30B33/04 ,  C30B33/06 ,  H01L29/1608

Abstract: A wafer is produced from an ingot by confirming whether or not an inclined c-axis of the ingot and a second orientation flat of the ingot are perpendicular to each other, and detecting a processing feed direction perpendicular to the direction in which the c-axis is inclined. The method includes performing sampling irradiation of the ingot with a laser beam, along a direction parallel to the second orientation flat and a plurality of directions inclined clockwise and counterclockwise by respective predetermined angles from the second orientation flat, thereby forming a plurality of sampled reduced strength areas in the ingot; measuring the number of nodes which exist per unit length on each of the sampled reduced strength areas, and determining a direction in which the sampled reduced strength area where the measured number of nodes is zero extends as a processing feed direction.

公开(公告)号：US20170114442A1

公开(公告)日：2017-04-27

申请号：US15312583

申请日：2015-05-22

Applicant: QUERTECH

Inventor： Frederic Guernalec ,  Denis Busardo

IPC: C23C14/00 ,  C30B33/04 ,  G02B1/02 ,  C01F7/02 ,  G02B1/11 ,  G02B1/12 ,  C30B29/20 ,  C23C14/48

CPC classification number: C23C14/0015 ,  C01F7/021 ,  C23C14/48 ,  C30B29/20 ,  C30B33/04 ,  G02B1/02 ,  G02B1/11 ,  G02B1/113 ,  G02B1/12 ,  G06F3/044 ,  G06F2203/04103

Abstract: A treatment method for modifying the reflected colour of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to modify the reflected colour of the treated sapphire material surface, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S).