公开(公告)号：US08563352B2

公开(公告)日：2013-10-22

申请号：US12750635

申请日：2010-03-30

申请人： Mohamed M. Hiliali ,  S. Brad Herner

发明人： Mohamed M. Hiliali ,  S. Brad Herner

IPC分类号： H01L31/0236

CPC分类号： H01L31/0236 ,  Y02E10/50

摘要： Low-relief texture can be created by applying and firing frit paste on a silicon surface. Where frit contacts the surface at high temperature, it etches silicon, dissolving silicon in the softened glass frit. The result is a series of small, randomly located pits, which produce a near-Lambertian surface, suitable for use in a photovoltaic cell. This texturing method consumes little silicon, and is advantageously used in a photovoltaic cell in which a thin silicon lamina comprises the base region of the cell. When the lamina is formed by implanting ions in a donor wafer to form a cleave plane and cleaving the lamina from the donor wafer at the cleave plane, the ion implantation step will serve to translate texture formed at a first surface to the cleave plane, and thus to the second, opposing surface following cleaving. Low-relief texture formed by other methods can be translated from the first surface to the second surface in this way as well.

摘要翻译： 可以通过在硅表面上施加和焙烧玻璃料膏来产生低浮雕纹理。 当玻璃料在高温下接触表面时，会腐蚀硅，将硅溶解在软化玻璃料中。 结果是一系列小的，随机位置的凹坑，其产生近Lambertian表面，适用于光伏电池。 这种纹理化方法消耗很少的硅，并且有利地用于其中薄硅层包括电池的基极区域的光伏电池中。 当通过在施主晶片中注入离子以形成解理平面并在分裂面处从施主晶片切割层而形成层板时，离子注入步骤将用于将形成在第一表面处的纹理平移至解理面，以及 从而在切割之后到达第二相对表面。 通过其他方法形成的低浮雕纹理也可以以这种方式从第一表面转换到第二表面。