公开(公告)号：US09023688B1

公开(公告)日：2015-05-05

申请号：US14298917

申请日：2014-06-07

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist ,  Albert Karl Henning

IPC: H01L21/00 ,  H01L21/8238 ,  H01L21/20 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L27/0688 ,  H01L21/67109 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/481 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for processing a semiconductor device, the method including; providing a first semiconductor layer including first transistors; forming interconnection layers overlying the transistors, where the interconnection layers include copper or aluminum; forming a shielding heat conducting layer overlaying the interconnection layers; forming an isolation layer overlaying the shielding heat conducting layer; forming a second semiconductor layer overlying the isolation layer, and processing the second semiconductor layer at a temperature greater than about 400° C., where the interconnection layers are kept at a temperature below about 400° C.

Abstract translation: 一种半导体器件的处理方法，该方法包括： 提供包括第一晶体管的第一半导体层; 形成覆盖晶体管的互连层，其中互连层包括铜或铝; 形成覆盖所述互连层的屏蔽导热层; 形成覆盖所述屏蔽导热层的隔离层; 形成覆盖隔离层的第二半导体层，以及在大于约400℃的温度下处理第二半导体层，其中互连层保持在低于约400℃的温度。