公开(公告)号：US20230299203A1

公开(公告)日：2023-09-21

申请号：US18322745

申请日：2023-05-24

申请人： Mosaid Technologies Incorporated

发明人： Shao-Ming YU ,  Chang-Yun Chang ,  Chih-Hao Chang ,  Hsin-Chih Chen ,  Kai-Tai Chang ,  Ming-Feng Shieh ,  Kuei-Liang Lu ,  Yi-Tang Lin

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/67 ,  H01L27/088

CPC分类号： H01L29/785 ,  H01L29/7842 ,  H01L29/66795 ,  H01L29/66545 ,  H01L21/823437 ,  H01L21/823431 ,  H01L21/823418 ,  H01L21/67248 ,  H01L27/0886 ,  H01L29/7848 ,  H01L21/823412

摘要： A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.