公开(公告)号：US08766396B2

公开(公告)日：2014-07-01

申请号：US13667228

申请日：2012-11-02

Applicant: Moxtek, Inc.

Inventor： Keith Decker ,  Derek Hullinger

IPC: H01L29/66

CPC classification number: H01L29/868 ,  H01L29/0619 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises a substrate, a cathode, an outer ring, an anode, an electrically insulating layer, and an electrically conducting layer. The substrate includes a semiconducting material having a first conduction type. The substrate has a first face and a second face substantially parallel to the first face. A cathode is disposed at the second face and has the first conduction type. An outer ring, having the first conduction type, is disposed at an outer perimeter of the first face of the substrate. An anode, having the second conduction type, is disposed at the first face of the substrate within an inner perimeter of the outer ring. An electrically insulating layer is disposed over the outer ring. An electrically conducting layer is disposed over the electrically insulating layer and over the outer ring. The electrically conducting layer electrically is insulated from the outer ring by the electrically insulating layer.

Abstract translation: 半导体器件包括衬底，阴极，外环，阳极，电绝缘层和导电层。 衬底包括具有第一导电类型的半导体材料。 衬底具有基本上平行于第一面的第一面和第二面。 阴极设置在第二面并且具有第一导电类型。 具有第一导电类型的外环设置在基板的第一面的外周。 具有第二导电类型的阳极设置在外环的内周边内的基板的第一面处。 电绝缘层设置在外环上。 导电层设置在电绝缘层上并在外环上。 导电层通过电绝缘层与外环电绝缘。

公开(公告)号：US20140124905A1

公开(公告)日：2014-05-08

申请号：US13667228

申请日：2012-11-02

Applicant: MOXTEK, INC.

Inventor： Keith Decker ,  Derek Hullinger

IPC: H01L29/868 ,  H01L23/00

CPC classification number: H01L29/868 ,  H01L29/0619 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises a substrate, a cathode, an outer ring, an anode, an electrically insulating layer, and an electrically conducting layer. The substrate includes a semiconducting material having a first conduction type. The substrate has a first face and a second face substantially parallel to the first face. A cathode is disposed at the second face and has the first conduction type. An outer ring, having the first conduction type, is disposed at an outer perimeter of the first face of the substrate. An anode, having the second conduction type, is disposed at the first face of the substrate within an inner perimeter of the outer ring. An electrically insulating layer is disposed over the outer ring. An electrically conducting layer is disposed over the electrically insulating layer and over the outer ring. The electrically conducting layer electrically is insulated from the outer ring by the electrically insulating layer.

Abstract translation: 半导体器件包括衬底，阴极，外环，阳极，电绝缘层和导电层。 衬底包括具有第一导电类型的半导体材料。 衬底具有基本上平行于第一面的第一面和第二面。 阴极设置在第二面并且具有第一导电类型。 具有第一导电类型的外环设置在基板的第一面的外周。 具有第二导电类型的阳极设置在外环的内周边内的基板的第一面处。 电绝缘层设置在外环上。 导电层设置在电绝缘层上并在外环上。 导电层通过电绝缘层与外环电绝缘。