公开(公告)号：US20130094629A1

公开(公告)日：2013-04-18

申请号：US13705724

申请日：2012-12-05

Applicant: Moxtek, Inc.

Inventor： Steven Liddiard ,  Brian Taylor ,  Keith Decker ,  Jason Maynard

IPC: G21K1/00 ,  H01J35/18

CPC classification number: G21K1/00 ,  B82Y20/00 ,  H01J5/18 ,  H01J35/18 ,  H01J2235/18 ,  H01J2235/183

Abstract: An x-ray window includes a mount with a support frame and an aperture. A window film has a stack of layers including: a thin film layer comprising a material selected from the group consisting of diamond, graphene, diamond-like carbon, beryllium, and combinations thereof; a boron hydride layer; and a polymer layer. The window film, including the thin film layer, the boron hydride layer, and the polymer layer, extends across the aperture and is supported by the support frame. The window film is attached to the support frame, defining a sealed joint. The layers are capable of withstanding a differential pressure of at least 1 atmosphere. The window film is substantially transmissive to x-rays having an energy in the range of 100-20,000 electronvolts.

Abstract translation: X射线窗口包括具有支撑框架和孔的安装座。 窗膜具有一叠层，包括：薄膜层，其包含选自金刚石，石墨烯，类金刚石碳，铍及其组合的材料; 硼氢化物层; 和聚合物层。 包括薄膜层，硼氢化物层和聚合物层的窗膜延伸穿过孔并由支撑框架支撑。 窗膜附接到支撑框架，限定密封接头。 这些层能承受至少1个大气压的差压。 窗膜对具有在100-20,000电子伏特范围内的能量的x射线基本上是透射的。

公开(公告)号：US08766396B2

公开(公告)日：2014-07-01

申请号：US13667228

申请日：2012-11-02

Applicant: Moxtek, Inc.

Inventor： Keith Decker ,  Derek Hullinger

IPC: H01L29/66

CPC classification number: H01L29/868 ,  H01L29/0619 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises a substrate, a cathode, an outer ring, an anode, an electrically insulating layer, and an electrically conducting layer. The substrate includes a semiconducting material having a first conduction type. The substrate has a first face and a second face substantially parallel to the first face. A cathode is disposed at the second face and has the first conduction type. An outer ring, having the first conduction type, is disposed at an outer perimeter of the first face of the substrate. An anode, having the second conduction type, is disposed at the first face of the substrate within an inner perimeter of the outer ring. An electrically insulating layer is disposed over the outer ring. An electrically conducting layer is disposed over the electrically insulating layer and over the outer ring. The electrically conducting layer electrically is insulated from the outer ring by the electrically insulating layer.

Abstract translation: 半导体器件包括衬底，阴极，外环，阳极，电绝缘层和导电层。 衬底包括具有第一导电类型的半导体材料。 衬底具有基本上平行于第一面的第一面和第二面。 阴极设置在第二面并且具有第一导电类型。 具有第一导电类型的外环设置在基板的第一面的外周。 具有第二导电类型的阳极设置在外环的内周边内的基板的第一面处。 电绝缘层设置在外环上。 导电层设置在电绝缘层上并在外环上。 导电层通过电绝缘层与外环电绝缘。

公开(公告)号：US20140124905A1

公开(公告)日：2014-05-08

申请号：US13667228

申请日：2012-11-02

Applicant: MOXTEK, INC.

Inventor： Keith Decker ,  Derek Hullinger

IPC: H01L29/868 ,  H01L23/00

CPC classification number: H01L29/868 ,  H01L29/0619 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises a substrate, a cathode, an outer ring, an anode, an electrically insulating layer, and an electrically conducting layer. The substrate includes a semiconducting material having a first conduction type. The substrate has a first face and a second face substantially parallel to the first face. A cathode is disposed at the second face and has the first conduction type. An outer ring, having the first conduction type, is disposed at an outer perimeter of the first face of the substrate. An anode, having the second conduction type, is disposed at the first face of the substrate within an inner perimeter of the outer ring. An electrically insulating layer is disposed over the outer ring. An electrically conducting layer is disposed over the electrically insulating layer and over the outer ring. The electrically conducting layer electrically is insulated from the outer ring by the electrically insulating layer.

Abstract translation: 半导体器件包括衬底，阴极，外环，阳极，电绝缘层和导电层。 衬底包括具有第一导电类型的半导体材料。 衬底具有基本上平行于第一面的第一面和第二面。 阴极设置在第二面并且具有第一导电类型。 具有第一导电类型的外环设置在基板的第一面的外周。 具有第二导电类型的阳极设置在外环的内周边内的基板的第一面处。 电绝缘层设置在外环上。 导电层设置在电绝缘层上并在外环上。 导电层通过电绝缘层与外环电绝缘。

公开(公告)号：US08964943B2

公开(公告)日：2015-02-24

申请号：US13705724

申请日：2012-12-05

Applicant: Moxtek, Inc.

Inventor： Steven Liddiard ,  Brian Taylor ,  Keith Decker ,  Jason Maynard

IPC: H01J35/18 ,  H01J5/18 ,  G21K1/00 ,  B82Y20/00

CPC classification number: G21K1/00 ,  B82Y20/00 ,  H01J5/18 ,  H01J35/18 ,  H01J2235/18 ,  H01J2235/183

Abstract: An x-ray window includes a mount with a support frame and an aperture. A window film has a stack of layers including: a thin film layer comprising a material selected from the group consisting of diamond, graphene, diamond-like carbon, beryllium, and combinations thereof; a boron hydride layer; and a polymer layer. The window film, including the thin film layer, the boron hydride layer, and the polymer layer, extends across the aperture and is supported by the support frame. The window film is attached to the support frame, defining a sealed joint. The layers are capable of withstanding a differential pressure of at least 1 atmosphere. The window film is substantially transmissive to x-rays having an energy in the range of 100-20,000 electronvolts.

Abstract translation: X射线窗口包括具有支撑框架和孔的安装座。 窗膜具有一叠层，包括：薄膜层，其包含选自金刚石，石墨烯，类金刚石碳，铍及其组合的材料; 硼氢化物层; 和聚合物层。 包括薄膜层，硼氢化物层和聚合物层的窗膜延伸穿过孔并由支撑框架支撑。 窗膜附接到支撑框架，限定密封接头。 这些层能承受至少1个大气压的差压。 窗膜对具有在100-20,000电子伏特范围内的能量的x射线基本上是透射的。