公开(公告)号：US20080023761A1

公开(公告)日：2008-01-31

申请号：US11819606

申请日：2007-06-28

申请人： Mu-Kyeng Jung ,  Xiao Quan Wang ,  Bai-Sun Kong

发明人： Mu-Kyeng Jung ,  Xiao Quan Wang ,  Bai-Sun Kong

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7835 ,  H01L21/26586 ,  H01L29/1045 ,  H01L29/66659

摘要： Semiconductor devices and methods of fabricating the same are provided. According to an example embodiment, a semiconductor device may include an active region disposed in a substrate and having first conductivity type impurity ions, a gate electrode crossing on the active region, a source region disposed within the active region at one a first side of the gate electrode, a drain region disposed within the active region at the a second side of the gate electrode, a source lightly doped drain (LDD) region disposed within the active region, extending toward the gate electrode from the source region, and having second conductivity type impurity ions, a drain LDD region disposed within the active region, extending toward the gate electrode from the drain region, and having the second conductivity type impurity ions in a concentration higher than the source LDD region, and a first halo region disposed within the active region, surrounding the source LDD region, and having the first conductivity type impurity ions.

摘要翻译： 提供半导体器件及其制造方法。 根据示例性实施例，半导体器件可以包括设置在衬底中并具有第一导电类型杂质离子的有源区，在有源区上交叉的栅电极，设置在有源区的第一侧的源极区 栅电极，设置在所述栅电极的第二侧的有源区内的漏极区，设置在所述有源区内的源极轻掺杂漏极（LDD）区，从所述源极区朝向所述栅电极延伸，并具有第二导电性 设置在有源区内的漏极LDD区域，从漏区延伸到栅电极，并且具有浓度高于源极LDD区域的第二导电型杂质离子，以及设置在该源极LDD区域内的第一晕圈区域 有源区，围绕源LDD区，并具有第一导电类型的杂质离子。

公开(公告)号：US07838966B2

公开(公告)日：2010-11-23

申请号：US11825181

申请日：2007-07-05

申请人： Xiao Quan Wang ,  Chang-Bong Oh ,  Seung-Hwan Lee

发明人： Xiao Quan Wang ,  Chang-Bong Oh ,  Seung-Hwan Lee

IPC分类号： H01L23/62

CPC分类号： H01L27/0802 ,  H01L28/20

摘要： A semiconductor device may include a resistance pattern including a resistance material on a substrate. The resistance pattern may include first and second spaced apart base elements, a bridge element, and first, second, third, and fourth extension elements. The first and second base elements may be substantially parallel, and the bridge element may be connected between respective center portions of the first and second spaced apart base elements. The first and second extension elements may be connected to opposite ends of the first base element and may extend toward the second base element, and the third and fourth extension elements may be connected to opposite ends of the second base element and may extend toward the first base element. Related methods are also discussed.

摘要翻译： 半导体器件可以包括在基板上包括电阻材料的电阻图案。 电阻图案可以包括第一和第二间隔开的基本元件，桥接元件以及第一，第二，第三和第四延伸元件。 第一和第二基座元件可以是基本上平行的，并且桥接元件可以连接在第一和第二间隔开的基本元件的相应中心部分之间。 第一和第二延伸元件可以连接到第一基座元件的相对端并且可以朝向第二基座元件延伸，并且第三和第四延伸元件可以连接到第二基座元件的相对端并且可以朝着第一基座元件 基本元素 还讨论了相关方法。

公开(公告)号：US20080054405A1

公开(公告)日：2008-03-06

申请号：US11825181

申请日：2007-07-05

申请人： Xiao Quan Wang ,  Chang-Bong Oh ,  Seung-Hwan Lee

发明人： Xiao Quan Wang ,  Chang-Bong Oh ,  Seung-Hwan Lee

IPC分类号： H01L29/06 ,  H01L21/02

CPC分类号： H01L27/0802 ,  H01L28/20

摘要： A semiconductor device may include a resistance pattern including a resistance material on a substrate. The resistance pattern may include first and second spaced apart base elements, a bridge element, and first, second, third, and fourth extension elements. The first and second base elements may be substantially parallel, and the bridge element may be connected between respective center portions of the first and second spaced apart base elements. The first and second extension elements may be connected to opposite ends of the first base element and may extend toward the second base element, and the third and fourth extension elements may be connected to opposite ends of the second base element and may extend toward the first base element. Related methods are also discussed.

摘要翻译： 半导体器件可以包括在基板上包括电阻材料的电阻图案。 电阻图案可以包括第一和第二间隔开的基本元件，桥接元件以及第一，第二，第三和第四延伸元件。 第一和第二基座元件可以是基本上平行的，并且桥接元件可以连接在第一和第二间隔开的基本元件的相应中心部分之间。 第一和第二延伸元件可以连接到第一基座元件的相对端并且可以朝向第二基座元件延伸，并且第三和第四延伸元件可以连接到第二基座元件的相对端并且可以朝着第一基座元件 基本元素 还讨论了相关方法。