摘要:
A clock gated circuit includes a pulse generator and a pulse level shifter. The pulse generator is driven by a first power supply voltage and is configured to receive a clock signal to generate a pulse and an inverted pulse. The pulse level shifter is driven by a second power supply voltage higher than the first power supply voltage and is configured to receive the pulse and the inverted pulse and to convert a level of the pulse in response to an enable signal.
摘要:
A scan flip-flop circuit includes an input unit and an output unit. The data output unit is configured to provide a data output terminal with a data output signal in response to a data input signal and a first control signal in a first operation mode, and the data output unit is configured to prohibit the data output terminal from being provided with a power supply voltage and a ground voltage applied to the scan flip-flop circuit in response to the data input signal and the first control signal in a second operation mode. The scan output unit is configured to provide a scan output terminal with a scan output signal in response to a scan input signal and a second control signal in the second operation mode.
摘要:
Disclosed herein is an apparatus for outputting complementary signals using bootstrapping technology. The apparatus for outputting complementary signals includes a precharaged logic block, one or more output nodes, and a bootstrapping circuit block. The precharged differential logic block generates a differential signal depending on an input signal. The one or more output nodes output the complementary signals depending on the differential signal. The bootstrapping circuit block is shared by the one or more output nodes, and amplifies the complementary signals.
摘要:
A CMOS charge pump with improved latch-up immunity is provided. The CMOS charge pump includes a blocking transistor that disconnects first and second boost nodes from a bulk node in response to a blocking control signal, such that a bulk voltage can be maintained at a predetermined level or higher. The CMOS charge pump in a power-up period first precharges the bulk voltage before the main pump performs a boosting operation and prevents a latch-up phenomenon.
摘要:
A charge pump circuit includes initialization units, each of which initializes a boost node to an initialization voltage. Boosting units each boost the boost node to a higher voltage than the initialization voltage in response to an input voltage. First and second pump circuits each include a transfer unit for transferring a voltage of the boost node to an output node and sharing the output node. The transfer unit of the first pump circuit includes two transfer transistors that are switched in response to a voltage of a control node of the first pump circuit and the voltage of the boost node of the second pump circuit. The transfer unit of the second pump circuit includes two transfer transistors that are switched in response to a voltage of a control node of the second pump circuit and the voltage of the boost node of the first pump circuit.
摘要:
Semiconductor devices and methods of fabricating the same are provided. According to an example embodiment, a semiconductor device may include an active region disposed in a substrate and having first conductivity type impurity ions, a gate electrode crossing on the active region, a source region disposed within the active region at one a first side of the gate electrode, a drain region disposed within the active region at the a second side of the gate electrode, a source lightly doped drain (LDD) region disposed within the active region, extending toward the gate electrode from the source region, and having second conductivity type impurity ions, a drain LDD region disposed within the active region, extending toward the gate electrode from the drain region, and having the second conductivity type impurity ions in a concentration higher than the source LDD region, and a first halo region disposed within the active region, surrounding the source LDD region, and having the first conductivity type impurity ions.
摘要:
An asynchronous sensing differential logic circuit using a charge-recycling technique includes a control block carrying out a logical operation on a request signal from a preceding stage and a request signal for a succeeding stage, and outputting a first or second input enable signal and a first or second clock signal, a functional block carrying out an operation on an input data according to the first or second input enable signals and the first or second clock signals from the control block, and outputting a first or second output enable signal and an output data, and a latch block triggered by an acknowledge signal from the succeeding stage, and outputting a request signal for the succeeding stage and a final output data by carrying out an operation on the first or second output enable signals and the output data from the functional block.
摘要:
A scan flip-flop circuit includes an input unit and an output unit. The input unit selects one of a data input signal and a scan input signal depending on an operation mode and generates an intermediate signal based on the selected signal. The output unit generates an output signal based on the intermediate signal and selects one of a data output terminal and a scan output terminal depending on the operation mode to provide the output signal through the selected output terminal. A voltage level at the selected output terminal bidirectionally transitions between a first voltage level and a second voltage level. A voltage level at a non-selected output terminal unidirectionally transitions between the first voltage level and the second voltage level.
摘要:
A clock gated circuit includes a pulse generator and a pulse level shifter. The pulse generator is driven by a first power supply voltage and is configured to receive a clock signal to generate a pulse and an inverted pulse. The pulse level shifter is driven by a second power supply voltage higher than the first power supply voltage and is configured to receive the pulse and the inverted pulse and to convert a level of the pulse in response to an enable signal.
摘要:
A CMOS charge pump with improved latch-up immunity is provided. The CMOS charge pump includes a blocking transistor that disconnects first and second boost nodes from a bulk node in response to a blocking control signal, such that a bulk voltage can be maintained at a predetermined level or higher. The CMOS charge pump in a power-up period first precharges the bulk voltage before the main pump performs a boosting operation and prevents a latch-up phenomenon.