公开(公告)号：US5976986A

公开(公告)日：1999-11-02

申请号：US689174

申请日：1996-08-06

申请人： Munir D. Naeem ,  Stuart M. Burns ,  Rosemary Christie ,  Virinder Grewal ,  Walter W. Kocon ,  Masaki Narita ,  Bruno Spuler ,  Chi-Hua Yang

发明人： Munir D. Naeem ,  Stuart M. Burns ,  Rosemary Christie ,  Virinder Grewal ,  Walter W. Kocon ,  Masaki Narita ,  Bruno Spuler ,  Chi-Hua Yang

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  C23F4/00

摘要： RIE of metallization is achieved at low power and low pressure using Cl.sub.2 and HCl as reactant species by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization thereon to be etched. Three layer metallizations which include bulk aluminum or aluminum alloy sandwiched between barrier layers made from, for example, Ti/TiN, are etched in a three step process wherein relatively lower quantities of Cl.sub.2 are used in the plasma during etching of the barrier layers and relatively higher quantities of Cl.sub.2 are used during etching of the bulk aluminum or aluminum alloy layer. The ratio of etchants Cl.sub.2 and HCl and an inert gas, such as N.sub.2 are controlled in a manner such that a very thin side wall layer (10-100 .ANG.) of reaction byproducts created during RIE are deposited on the side walls of trenches formed in the metallization during etching. The side wall layer improves the isotropic nature of the etch such that submicron metallization lines with defect free side walls are formed. Hydrogen (H.sub.2) can be added to the plasma and will act to reduce corrosion.

摘要翻译： 通过使用Cl2和HCl作为反应物种来实现金属化的RIE，通过产生变压器耦合的等离子体，其功率施加到位于要蚀刻的金属化的衬底上方和下方的电极上。 夹在由例如Ti / TiN制成的阻挡层之间的主体铝或铝合金的三层金属化被蚀刻在三步法中，其中在蚀刻阻挡层期间在等离子体中使用相对较少量的Cl 2，并且相对 在大量铝或铝合金层的蚀刻期间使用较高量的Cl 2。 蚀刻剂Cl2和HCl以及惰性气体（例如N 2）的比例被控制为使得在RIE期间产生的反应副产物的非常薄的侧壁层（10-100）沉积在形成的沟槽的侧壁上 蚀刻期间的金属化。 侧壁层改善了蚀刻的各向同性，从而形成具有无缺陷侧壁的亚微米金属化线。 可以将氢（H2）加入到等离子体中，并且起作用以减少腐蚀。