公开(公告)号：US5976986A

公开(公告)日：1999-11-02

申请号：US689174

申请日：1996-08-06

申请人： Munir D. Naeem ,  Stuart M. Burns ,  Rosemary Christie ,  Virinder Grewal ,  Walter W. Kocon ,  Masaki Narita ,  Bruno Spuler ,  Chi-Hua Yang

发明人： Munir D. Naeem ,  Stuart M. Burns ,  Rosemary Christie ,  Virinder Grewal ,  Walter W. Kocon ,  Masaki Narita ,  Bruno Spuler ,  Chi-Hua Yang

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  C23F4/00

摘要： RIE of metallization is achieved at low power and low pressure using Cl.sub.2 and HCl as reactant species by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization thereon to be etched. Three layer metallizations which include bulk aluminum or aluminum alloy sandwiched between barrier layers made from, for example, Ti/TiN, are etched in a three step process wherein relatively lower quantities of Cl.sub.2 are used in the plasma during etching of the barrier layers and relatively higher quantities of Cl.sub.2 are used during etching of the bulk aluminum or aluminum alloy layer. The ratio of etchants Cl.sub.2 and HCl and an inert gas, such as N.sub.2 are controlled in a manner such that a very thin side wall layer (10-100 .ANG.) of reaction byproducts created during RIE are deposited on the side walls of trenches formed in the metallization during etching. The side wall layer improves the isotropic nature of the etch such that submicron metallization lines with defect free side walls are formed. Hydrogen (H.sub.2) can be added to the plasma and will act to reduce corrosion.

摘要翻译： 通过使用Cl2和HCl作为反应物种来实现金属化的RIE，通过产生变压器耦合的等离子体，其功率施加到位于要蚀刻的金属化的衬底上方和下方的电极上。 夹在由例如Ti / TiN制成的阻挡层之间的主体铝或铝合金的三层金属化被蚀刻在三步法中，其中在蚀刻阻挡层期间在等离子体中使用相对较少量的Cl 2，并且相对 在大量铝或铝合金层的蚀刻期间使用较高量的Cl 2。 蚀刻剂Cl2和HCl以及惰性气体（例如N 2）的比例被控制为使得在RIE期间产生的反应副产物的非常薄的侧壁层（10-100）沉积在形成的沟槽的侧壁上 蚀刻期间的金属化。 侧壁层改善了蚀刻的各向同性，从而形成具有无缺陷侧壁的亚微米金属化线。 可以将氢（H2）加入到等离子体中，并且起作用以减少腐蚀。

公开(公告)号：US4630356A

公开(公告)日：1986-12-23

申请号：US777800

申请日：1985-09-19

申请人： Rosemary Christie ,  Bao-Tai Hwang ,  San-Mei Ku ,  Janet M. Sickler

发明人： Rosemary Christie ,  Bao-Tai Hwang ,  San-Mei Ku ,  Janet M. Sickler

IPC分类号： H01L21/76 ,  H01L21/306 ,  H01L21/308 ,  H01L21/316 ,  H01L21/762 ,  H01L21/467 ,  H01L21/94

CPC分类号： H01L21/7621 ,  H01L21/3081

摘要： Disclosed is a method of forming in a monocrystalline silicon body an optimum recessed oxide isolation structure with reduced steepness of the bird's neck. Starting from a monocrystalline silicon body, there is formed thereon a layered structure of first silicon dioxide, polycrystalline silicon, second silicon dioxide and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form the oxide isolation pattern within the silicon body. The exposed areas of the silicon body are anisotropically reactive ion etched to an initial portion of the desired depth obtaining the corresponding portion of the trench having substantially vertical walls. Then by chemical etching the trench is extended to a final portion of the desired depth obtaining inwardly sloped walls in the final portion. The body is then thermally oxidized until the desired oxide isolation penetrates to the desired depth within the silicon body.

摘要翻译： 公开了一种在单晶硅体中形成具有降低的脖子陡度的最佳凹陷氧化物隔离结构的方法。 从单晶硅体开始，依次形成第一二氧化硅，多晶硅，第二二氧化硅和氮化硅的分层结构。 这些层被图案化以在期望在硅体内形成氧化物隔离图案的区域的结构中形成开口。 硅体的暴露区域是各向异性反应离子蚀刻到期望深度的初始部分，获得具有基本垂直壁的沟槽的相应部分。 然后通过化学蚀刻将沟槽延伸到所需深度的最后部分，从而获得最终部分中的向内倾斜的壁。 然后将身体热氧化直到所需的氧化物隔离渗入硅体内所需的深度。