公开(公告)号：US20180159497A1

公开(公告)日：2018-06-07

申请号：US15889312

申请日：2018-02-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hideki IWAMOTO ,  Ryo OTSUBO ,  Kouhei FUJIO

IPC: H03H9/02 ,  H03H9/25

CPC classification number: H03H9/02574 ,  H03H9/02559 ,  H03H9/25

Abstract: An acoustic wave device includes a high acoustic velocity support substrate defining and functioning as a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode that are laminated in this order. When a wavelength of an acoustic wave determined by an electrode finger cycle of the IDT electrode is represented by λ, a film thickness of the piezoelectric film is about 1.5λ or more and about 3.5λ or less. The acoustic velocity of a bulk wave propagating in the high acoustic velocity support substrate is higher than the acoustic velocity of an acoustic wave propagating in the piezoelectric film. The acoustic velocity of a bulk wave propagating in the low acoustic velocity film is lower than the acoustic velocity of an acoustic wave propagating in the piezoelectric film.

公开(公告)号：US20170077897A1

公开(公告)日：2017-03-16

申请号：US15342171

申请日：2016-11-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo OTSUBO ,  Kouhei FUJIO

IPC: H03H9/02 ,  H01L41/18 ,  H03H9/13

CPC classification number: H03H9/02574 ,  H01L41/18 ,  H03H9/02881 ,  H03H9/02897 ,  H03H9/131

Abstract: An elastic wave device includes a high-acoustic-velocity film, a low-acoustic-velocity film, and a piezoelectric film stacked on a substrate in this order, and a bonding layer is disposed at any position from inside of the high-acoustic-velocity film to an interface between the low-acoustic-velocity film and the piezoelectric film. Alternatively, an elastic wave device includes a low-acoustic-velocity film and a piezoelectric film stacked on a high-acoustic-velocity substrate, and a bonding layer is located in the low-acoustic-velocity film or at an interface between the piezoelectric film and the low-acoustic-velocity film.

Abstract translation: 弹性波装置依次包括层叠在基板上的高声速膜，低声速膜和压电膜，接合层设置在高声波膜的内部的任何位置， 速度膜到低音速膜和压电膜之间的界面。 或者，弹性波装置包括层叠在高声速基板上的低声速膜和压电膜，并且接合层位于低声速膜中或位于压电膜之间的界面 和低声速膜。