公开(公告)号：US20170077897A1

公开(公告)日：2017-03-16

申请号：US15342171

申请日：2016-11-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo OTSUBO ,  Kouhei FUJIO

IPC: H03H9/02 ,  H01L41/18 ,  H03H9/13

CPC classification number: H03H9/02574 ,  H01L41/18 ,  H03H9/02881 ,  H03H9/02897 ,  H03H9/131

Abstract: An elastic wave device includes a high-acoustic-velocity film, a low-acoustic-velocity film, and a piezoelectric film stacked on a substrate in this order, and a bonding layer is disposed at any position from inside of the high-acoustic-velocity film to an interface between the low-acoustic-velocity film and the piezoelectric film. Alternatively, an elastic wave device includes a low-acoustic-velocity film and a piezoelectric film stacked on a high-acoustic-velocity substrate, and a bonding layer is located in the low-acoustic-velocity film or at an interface between the piezoelectric film and the low-acoustic-velocity film.

Abstract translation: 弹性波装置依次包括层叠在基板上的高声速膜，低声速膜和压电膜，接合层设置在高声波膜的内部的任何位置， 速度膜到低音速膜和压电膜之间的界面。 或者，弹性波装置包括层叠在高声速基板上的低声速膜和压电膜，并且接合层位于低声速膜中或位于压电膜之间的界面 和低声速膜。

公开(公告)号：US20180159497A1

公开(公告)日：2018-06-07

申请号：US15889312

申请日：2018-02-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hideki IWAMOTO ,  Ryo OTSUBO ,  Kouhei FUJIO

IPC: H03H9/02 ,  H03H9/25

CPC classification number: H03H9/02574 ,  H03H9/02559 ,  H03H9/25

Abstract: An acoustic wave device includes a high acoustic velocity support substrate defining and functioning as a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode that are laminated in this order. When a wavelength of an acoustic wave determined by an electrode finger cycle of the IDT electrode is represented by λ, a film thickness of the piezoelectric film is about 1.5λ or more and about 3.5λ or less. The acoustic velocity of a bulk wave propagating in the high acoustic velocity support substrate is higher than the acoustic velocity of an acoustic wave propagating in the piezoelectric film. The acoustic velocity of a bulk wave propagating in the low acoustic velocity film is lower than the acoustic velocity of an acoustic wave propagating in the piezoelectric film.

公开(公告)号：US20160056789A1

公开(公告)日：2016-02-25

申请号：US14932182

申请日：2015-11-04

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo OTSUBO ,  Koji YAMAMOTO

IPC: H03H9/02 ,  H03H3/02 ,  H03H3/10

CPC classification number: H03H9/02992 ,  H03H3/02 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/1071 ,  H03H9/14541

Abstract: An IDT electrode of an elastic wave device includes a first electrode film made of Al or mainly containing Al, a second electrode film with a density larger than that of the first electrode film, an anti-diffusion film which is located between the first electrode film and the second electrode film and which significantly reduces or prevents interdiffusion between the first electrode film and the second electrode film, and a first Ti film located between the first electrode film and the anti-diffusion film, to diffuse a diffusion material into the first electrode film.

Abstract translation: 弹性波装置的IDT电极包括由Al或主要包含Al的第一电极膜，密度大于第一电极膜的第二电极膜，位于第一电极膜之间的防扩散膜 和第二电极膜，并且显着地减少或防止第一电极膜和第二电极膜之间的相互扩散，以及位于第一电极膜和反扩散膜之间的第一Ti膜，以将扩散材料扩散到第一电极 电影。