公开(公告)号：US20240321782A1

公开(公告)日：2024-09-26

申请号：US18614266

申请日：2024-03-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Sébastien IOCHEM ,  Stéphane BOUVIER

IPC: H01L23/62 ,  H01L21/027 ,  H01L25/16 ,  H01L27/06

CPC classification number: H01L23/62 ,  H01L21/0274 ,  H01L25/16 ,  H01L27/0682 ,  H01L27/0688 ,  H01L28/90

Abstract: A resistor-capacitor component that includes: a capacitor having at least a first electrode structure and a second electrode structure separated by a dielectric structure; an insulating layer on the second electrode structure, the insulating layer having contact holes distributed across a surface of the insulating layer, each of the contact holes delimiting an opening onto the second electrode structure having a corrugated edge; and a conductive layer on the insulating layer and filling the contact holes to form electrical contacts with the second electrode structure.

公开(公告)号：US20220216350A1

公开(公告)日：2022-07-07

申请号：US17656510

申请日：2022-03-25

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Stéphane BOUVIER ,  Sébastien IOCHEM ,  David DENIS

IPC: H01L29/94 ,  H01L29/66 ,  H01L49/02

Abstract: A three-dimensional capacitor component that includes a substrate having a textured (contoured) surface and a stack of layers formed conformally over the textured surface to constitute a capacitive stack structure. Respective contacts to the bottom and top electrodes of the capacitive stack structure are both provided at a first side of the component. The bottom electrode and substrate are doped with dopants of the same polarity, and the substrate is heavily doped so that current between a terminal portion of the bottom electrode and remote parts of the bottom electrode flows via the substrate, lowering ESR. A backside metallization layer produces a further, and greater, reduction in ESR. The capacitor component may be implemented as a discrete capacitor component, but may also be integrated with other components/devices. Corresponding fabrication methods are described.