Abstract:
A ceramic powder for use in a grain boundary insulated semiconductor ceramic that has an excellent ESD withstanding voltage, a semiconductor ceramic capacitor using the ceramic powder, and a manufacturing method therefor. The ceramic powder for use in a SrTiO3 based grain boundary insulated semiconductor ceramic has a specific surface area of 4.0 m2/g or more and 8.0 m2/g or less, and a cumulative 90% grain size D90 of 1.2 μm or less.
Abstract:
A ceramic powder for use in a grain boundary insulated semiconductor ceramic that has an excellent ESD withstanding voltage, a semiconductor ceramic capacitor using the ceramic powder, and a manufacturing method therefor. The ceramic powder for use in a SrTiO3 based grain boundary insulated semiconductor ceramic has a specific surface area of 4.0 m2/g or more and 8.0 m2/g or less, and a cumulative 90% grain size D90 of 1.2 μm or less.
Abstract:
A dielectric ceramic that contains, as its main constituent, a perovskite-type compound containing Ba and Ti, and, with respect to the Ti content of 100 parts by mole, contains Re1 (Re1 is at least one element of La and Nd) in the range of 0.15 to 3 parts by mole, Y in the range of 0.1 to 3 parts by mole, Mg in the range of 0.3 to 13 parts by mole, and Fe in the range of 0.01 to 5 parts by mole.
Abstract:
A dielectric ceramic that contains, as its main constituent, a perovskite-type compound containing Ba and Ti, and, with respect to the Ti content of 100 parts by mole, contains Re1 (Re1 is at least one element of La and Nd) in the range of 0.15 to 3 parts by mole, Y in the range of 0.1 to 3 parts by mole, Mg in the range of 0.3 to 13 parts by mole, and Fe in the range of 0.01 to 5 parts by mole.