Magnetic sensor and current sensor

    公开(公告)号:US11249116B2

    公开(公告)日:2022-02-15

    申请号:US16847708

    申请日:2020-04-14

    Abstract: A magnetic sensor includes a substrate, and a magneto-resistive element portion which is provided on the substrate and has a predetermined magneto-sensitive direction, and in which a bias magnetic field is applied in a direction orthogonal or substantially orthogonal to the magneto-sensitive direction. The magneto-resistive element portion includes a magnetic layer having a negative magneto-striction constant, and stress-induced anisotropy of the magnetic layer develops in a direction parallel or substantially parallel to the direction of the bias magnetic field in response to a tensile stress act on the substrate in a direction parallel or substantially parallel to the magneto-sensitive direction.

    Silicon transformer integrated chip

    公开(公告)号:US12148693B2

    公开(公告)日:2024-11-19

    申请号:US17640991

    申请日:2020-10-07

    Abstract: A transformer includes a silicon substrate, a plurality of metal layers and a plurality of insulating layers laminated on the silicon substrate, a bottom winding of a metal contacting a first metal layer and a second metal layer of the plurality of metal layers, a first insulating layer on the bottom winding, a core on the first insulating layer, a second insulating layer on the core, a top winding of the metal that extends around the core and a portion of the second insulating layer, and a third insulating layer on the top winding. At least one of the top winding and the bottom winding is thicker than each of the plurality of metal layers.

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