摘要:
An anode includes a base body of a sintered porous material of niobium particles, a surface layer made of crystalline niobium oxide formed on the base body, and an anode lead having partly buried in base body 1a. A dielectric layer containing amorphous niobium oxide is formed by anodic oxidation on the cathode. An electrolyte layer made of polypyrrole is formed on the dielectric layer and a cathode is formed on the electrolyte layer. A conductive adhesive layer and cathode terminal are formed on an upper surface of the cathode. The anode lead exposed from the base body is connected to an anode terminal by welding. In addition, a mold resin is formed to cover the second conductive layer, the cathode terminal and the anode terminal so as to expose cathode terminal and an end of anode terminal.
摘要:
An anode includes a base body of a sintered porous material of niobium particles, a surface layer made of crystalline niobium oxide formed on the base body, and an anode lead having partly buried in base body 1a. A dielectric layer containing amorphous niobium oxide is formed by anodic oxidation on the cathode. An electrolyte layer made of polypyrrole is formed on the dielectric layer and a cathode is formed on the electrolyte layer. A conductive adhesive layer and cathode terminal are formed on an upper surface of the cathode. The anode lead exposed from the base body is connected to an anode terminal by welding. In addition, a mold resin is formed to cover the second conductive layer, the cathode terminal and the anode terminal so as to expose cathode terminal and an end of anode terminal.
摘要:
The present invention relates to a solid electrolytic capacitor provided with a anode made of a metal or an alloy having valve action, a dielectric layer formed on the anode, and an electrolyte layer consisting of a conductive polymer layer formed so as to have contact with a portion of the region on the dielectric layer surface and a manganese dioxide layer formed so as to have contact with the other portion of the region on the dielectric layer surface.
摘要:
The nickel-metal hydride storage battery of this invention includes a nonsintered nickel electrode using, as a positive electrode active material, nickel hydroxide including, as a solid-solution element, at least one element Q selected from the group consisting of Mn, Al, Y, Yb and Co; and a pasted hydrogen-absorbing alloy electrode using, as a negative electrode active material, a hydrogen-absorbing alloy represented by a composition formula, TiaVbNicMd, in which a+b+c=100; 15≦a≦45; 35≦b≦75; 5≦c≦25; 0
摘要翻译:本发明的镍氢蓄电池包括非烧结镍电极,其使用氢氧化镍作为正极活性材料,所述氢氧化镍包括作为固溶体元素的至少一种选自Mn,Al, Y,Yb和Co; 和作为负极活性物质的由组成式表示的吸氢合金的粘贴吸氢合金电极,其特征在于,所述吸氢合金是由组成式表示的吸氢合金,Ti < 其中a + b + c = 100; b SB> 15 <= a <= 45; 35 <= b <= 75; 5 <= c <= 25; 0
摘要:
The present invention relates to a solid electrolytic capacitor provided with a anode made of a metal or an alloy having valve action, a dielectric layer formed on the anode, and an electrolyte layer consisting of a conductive polymer layer formed so as to have contact with a portion of the region on the dielectric layer surface and a manganese dioxide layer formed so as to have contact with the other portion of the region on the dielectric layer surface.
摘要:
A solid electrolytic capacitor according to the present invention comprises an anode body, an anode lead in contact with an outer surface of the anode body, a dielectric layer formed on a surface of the anode lead, and a cathode layer formed on a surface of the dielectric layer. The anode lead is provided with a plurality of openings passing through the anode lead. Another solid electrolytic capacitor according to the present invention comprises an anode body, an anode lead in contact with an outer surface of the anode body, a dielectric layer formed on a surface of the anode lead, and a cathode layer formed on a surface of the dielectric layer. The anode lead is provided with a cutout on an outer circumference edge of the anode lead.
摘要:
A dial device includes a body, a first dial knob supported to the body so as to rotate around a predetermined axis, a second dial knob supported to the body so as to rotate around the predetermined axis, and the second dial knob being provided so as to surround the first dial knob, a gear which rotates in response to a rotation of the second dial knob, and is provided on the body, and a pulley unit which includes a first pulley having a connection portion and a second pulley having a gear portion, the second pulley being arranged coaxially with the first pulley. The connection portion of the first pulley is connected to the first dial knob and the gear portion of the second pulley is meshed with the gear in a state that the pulley unit is attached to the body.
摘要:
A stationary platen of an injection molding machine is composed of a mold mounting plate, a tie-bar connecting member, and a mold clamping force transmission plate. The mold mounting plate is formed of a planar portion for mold fixing and a cylindrical connecting portion that extends from the planar portion and passes through a central through hole of the tie-bar connecting member. The mold clamping force transmission plate connects the cylindrical connecting portion of the mold mounting plate and the tie-bar connecting member with a predetermined gap therebetween lest the connecting member and the mounting plate come into contact and interfere with each other.
摘要:
A precharge voltage generating circuit outputs any of a plurality of kinds of precharge voltages in accordance with an ambient temperature. A precharge circuit supplies the precharge voltage to a bit line during the nonaccess of a dynamic memory cell. A sense amplifier amplifies a difference between the voltage of a data signal read from the dynamic memory cell onto the bit line and the supplied precharge voltage. The precharge voltage is altered in accordance with the ambient temperature, whereby the read margin of the sense amplifier can be changed, and the worst value of the data retaining time of the memory cell can be improved. As a result, the frequency of refreshing of the memory cell can be lowered, reducing power consumption and a standby current.