公开(公告)号：US11158830B2

公开(公告)日：2021-10-26

申请号：US16771230

申请日：2018-12-05

申请人： NANJING UNIVERSITY OF TECHNOLOGY

发明人： Jianpu Wang ,  Nana Wang ,  Yu Cao ,  Wei Huang

IPC分类号： H01L51/50 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56

摘要： The disclosure discloses a perovskite film layer, a device and a preparation method for effectively improving the efficiency of perovskite optoelectronics. The perovskite film layer consists of a layer with discontinuous, irregularly distributed perovskite crystal grains and an organic insulating layer with a low refractive index embedded between the perovskite crystal grains. The perovskite crystal grains form a plurality of convex portions, and the organic insulating layer forms a plurality of concave portions between the convex portions. By adding an excess of an alkylammonium salt and/or an organic molecule with a specific functional group to perovskite precursor solution, a concave-convex film layer structure is spontaneously formed, and an upper charge transport layer and an electrode form pleated concave-convex structures. Such a special perovskite thin film structure formed by a simple solution method can effectively improve the light-outcoupling efficiency and enhance the performance of the perovskite light-emitting device.