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公开(公告)号:US20190390109A1
公开(公告)日:2019-12-26
申请号:US16422242
申请日:2019-05-24
Applicant: NANOSYS, Inc.
Inventor: Christian IPPEN , Jonathan TRUSKIER , Jesse MANDERS
Abstract: The invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.
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公开(公告)号:US20210277307A1
公开(公告)日:2021-09-09
申请号:US17190621
申请日:2021-03-03
Applicant: Nanosys, Inc.
Inventor: Benjamin NEWMEYER , Christian IPPEN , Jesse MANDERS , Ruiqing MA , Dylan Charles HAMILTON
Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using a Group IV metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
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公开(公告)号:US20210013371A1
公开(公告)日:2021-01-14
申请号:US17034152
申请日:2020-09-28
Applicant: Nanosys, Inc.
Inventor: Jesse MANDERS , Christian IPPEN , Donald ZEHNDER , Jonathan TRUSKIER , Charles HOTZ
Abstract: Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.
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公开(公告)号:US20200010761A1
公开(公告)日:2020-01-09
申请号:US16456211
申请日:2019-06-28
Applicant: Nanosys, Inc.
Inventor: Jonathan TRUSKIER , Christian IPPEN , Jesse MANDERS , Ilan Jen-La PLANTE
Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.
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