公开(公告)号：US20040189373A1

公开(公告)日：2004-09-30

申请号：US10808432

申请日：2004-03-25

Applicant: NAT. INST. OF ADVANCED INDUSTR. SCIENCE AND TECH.

Inventor： Toshihiro Sekigawa ,  Hanpei Koike ,  Tadashi Nakagawa

IPC: G06G007/18

CPC classification number: H03K3/356017 ,  H03K3/356069 ,  H03K17/302 ,  H03K2217/0018

Abstract: In a double gate FET, the threshold voltage during the operation of a transient response thereof is enabled to be arbitrarily and accurately controlled by a method that includes applying a first input signal intended to perform an ordinary logic operation to one of the gate electrodes thereof and applying, in response to this signal, a second signal that has a signal-level temporal-change direction as the first input signal and has at least one of the low level and the high level thereof shifted by a predetermined magnitude or endowed with a predetermined time difference or has the time slower or faster signal level change of the signal to the other gate electrode.

Abstract translation: 在双栅极FET中，其瞬态响应的操作期间的阈值电压能够通过包括将用于执行常规逻辑运算的第一输入信号施加到其栅电极之一的方法来任意和精确地控制， 响应于该信号，施加具有作为第一输入信号的信号电平时间变化方向的第二信号，并且将低电平和高电平中的至少一个偏移预定幅度或赋予预定的 时间差或信号电平变化较慢或较快的信号到另一个栅电极的时间。