公开(公告)号：US10533962B2

公开(公告)日：2020-01-14

申请号：US15370384

申请日：2016-12-06

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Yu-Jen Hsiao ,  Ting-Jen Hsueh ,  Yu-Te Lin ,  Yen-Hsi Li ,  Jia-Min Shieh ,  Chien-Wei Liu ,  Chi-Wei Chiang

IPC: G01N27/12 ,  G01N33/00

Abstract: The present invention provides a gas sensor structure comprising a gas sensing chip. The back of the sensing material is a hollow structure. An insulating layer is below the sensing material. A micro heating is disposed surrounding the sensing material. The sensing material adheres to sensing electrodes. The sensing material is a complex structure including a metal oxide semiconductor and a roughened lanthanum-carbonate gas sensing layer. The thickness of the metal oxide semiconductor is between 0.2 μm and 10 μm; the thickness of the roughened lanthanum-carbonate gas sensing layer is between 0.1 μm and 4 μm; and the size of the back etching holes is smaller than 1*1 mm. By using the gas sensor structure according to the present invention, a suspended gas sensing structure can be fabricated on a silicon substrate and the chip size can be minimized.