公开(公告)号：US10656129B2

公开(公告)日：2020-05-19

申请号：US15837227

申请日：2017-12-11

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Ting-Jen Hsueh ,  Yu-Jen Hsiao ,  Yu-Te Lin ,  Yen-Hsi Li ,  Yung-Hsiang Chen ,  Jia-Min Shieh

IPC: G01N27/12 ,  G01N33/00 ,  G01N21/3504 ,  G01N27/62 ,  G01N21/359

Abstract: The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.

公开(公告)号：US10533962B2

公开(公告)日：2020-01-14

申请号：US15370384

申请日：2016-12-06

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Yu-Jen Hsiao ,  Ting-Jen Hsueh ,  Yu-Te Lin ,  Yen-Hsi Li ,  Jia-Min Shieh ,  Chien-Wei Liu ,  Chi-Wei Chiang

IPC: G01N27/12 ,  G01N33/00

Abstract: The present invention provides a gas sensor structure comprising a gas sensing chip. The back of the sensing material is a hollow structure. An insulating layer is below the sensing material. A micro heating is disposed surrounding the sensing material. The sensing material adheres to sensing electrodes. The sensing material is a complex structure including a metal oxide semiconductor and a roughened lanthanum-carbonate gas sensing layer. The thickness of the metal oxide semiconductor is between 0.2 μm and 10 μm; the thickness of the roughened lanthanum-carbonate gas sensing layer is between 0.1 μm and 4 μm; and the size of the back etching holes is smaller than 1*1 mm. By using the gas sensor structure according to the present invention, a suspended gas sensing structure can be fabricated on a silicon substrate and the chip size can be minimized.