公开(公告)号：US20140264271A1

公开(公告)日：2014-09-18

申请号：US13845366

申请日：2013-03-18

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Jia-Min Shieh ,  Wen-Hsien Huang ,  Yu-Chung Lien ,  Chang-Hong Shen ,  Fu-Ming Pan ,  Hao-Chung Kuo

IPC: H01L29/15 ,  H01L29/06

CPC classification number: H01L29/0665 ,  C04B35/14 ,  C04B35/62218 ,  C04B35/624 ,  C04B38/0054 ,  C04B2235/3224 ,  C04B2235/443 ,  C04B2235/616 ,  C04B2235/9646 ,  G11C11/221

Abstract: A ferroelectric memory device includes a memory layer, made of a silicon-based ferroelectric memory material. The silicon-based ferroelectric memory material includes a mesoporous silica film with nanopores and atomic polar structures on inner walls of the nanopores. The atomic polar structures are formed by asymmetrically bonding metal ions to silicon-oxygen atoms on the inner walls, and the silicon-based ferroelectric memory material includes semiconductor quantum dots, metal quantum dots and metal-semiconductor alloy quantum dots.

Abstract translation: 铁电存储器件包括由硅基铁电存储材料制成的存储层。 硅基铁电记忆材料包括具有纳米孔的介孔二氧化硅膜和在纳米孔的内壁上的原子极性结构。 原子极性结构通过将金属离子与内壁上的硅 - 氧原子不对称地结合而形成，硅基铁电存储材料包括半导体量子点，金属量子点和金属 - 半导体合金量子点。