公开(公告)号：US20160238937A1

公开(公告)日：2016-08-18

申请号：US15024407

申请日：2014-09-25

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin KAWAKITA ,  Toyohiro CHIKYO ,  Takayuki NAKANE

IPC: G03F7/11 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0278

Abstract: A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

Abstract translation: 提供了抗蚀剂膜结构，其允许抗蚀剂层对EUV或电子束具有改善的光敏性，而不改变抗蚀剂材料本身的光敏性。 在形成在基板3上的抗蚀剂聚合物层2上设置有厚度小至纳米级的金属层1.当该结构中的抗蚀剂层曝光时，金属层1产生表面等离子体效应以提高 照射到抗蚀剂膜上，使得抗蚀剂膜的光敏性得到改善。