公开(公告)号：US20160149110A1

公开(公告)日：2016-05-26

申请号：US14900439

申请日：2014-07-10

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  MITSUBA CORPORATION

发明人： Yukihiro ISODA ,  Satoki TADA ,  Hirofumi FUJIU

IPC分类号： H01L35/34 ,  C22C13/00 ,  H01L35/14

CPC分类号： H01L35/34 ,  B22F3/14 ,  B22F2301/40 ,  C01B33/06 ,  C22C1/04 ,  C22C1/0408 ,  C22C13/00 ,  C22C23/00 ,  H01L35/14

摘要： A manufacturing method for a p-type semiconductor formed by sintering a compound represented by the general chemical formula: Mg2SiXSnYGeZ (where X+Y+Z=1, X>0, and Y>0, Z>0). The p-type semiconductor has a composition in which X is in the range of 0.00 0.00, and Y is in the range of 0.60≦Y≦0.95, and Z satisfies either of the relationships: −1.00Y+1.00≧Z≧−1.00Y+0.75, where 0.60≦Y≦0.90 and Z>0.00, and −2.00Y+1.90≧Z≧−1.00Y+0.75, where 0.90≦Y≦0.95 and Z>0.00.

摘要翻译： 通过烧结由通式化学式Mg2SiXSnYGeZ（其中X + Y + Z = 1，X> 0和Y> 0，Z> 0）表示的化合物形成的p型半导体的制造方法。 p型半导体具有X在0.00 0.00，Y是 在0.60＆nlE的范围内，Y＆lt; lI; 0.95和Z满足以下关系：-1.00Y +1.00≥Z≥-1.00Y + 0.75，其中0.60＆nlE; Y＆nlE; 0.90和Z> 0.00和-2.00Y + 1.90≥Z≥-1.00Y + 0.75，其中0.90＆nlE; Y＆nlE; 0.95和Z> 0.00。