公开(公告)号：US20160211325A1

公开(公告)日：2016-07-21

申请号：US14915546

申请日：2014-07-30

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takahiro MORI

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/167 ,  H01L29/161 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1033 ,  H01L21/02532 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66568 ,  H01L29/7391 ,  H01L29/78

Abstract: The present invention provides a semiconductor element that can be manufactured easily at a low cost, can obtain a high tunneling current, and has an excellent operating characteristic, a method for manufacturing the same, and a semiconductor integrated circuit including the semiconductor element. The semiconductor element of the present invention is characterized in that the whole or a part of a tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor containing isoelectronic-trap-forming impurities.

Abstract translation: 本发明提供一种能够以低成本容易地制造的半导体元件，可以获得高的隧道电流，并且具有优异的工作特性，其制造方法以及包括该半导体元件的半导体集成电路。 本发明的半导体元件的特征在于，隧道结的全部或一部分由包含等电子陷阱形成杂质的间接转移半导体制成的半导体区域构成。

公开(公告)号：US20170077092A1

公开(公告)日：2017-03-16

申请号：US15125263

申请日：2015-02-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takahiro MORI

IPC: H01L27/088 ,  H01L21/265 ,  H01L27/12 ,  H01L29/417 ,  H01L21/8234 ,  H01L21/84

CPC classification number: H01L27/088 ,  H01L21/26513 ,  H01L21/823418 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41725

Abstract: The present invention provides an integrated circuit formed of tunneling field-effect transistors that includes a first tunneling field-effect transistor in which one of a first P-type region and a first N-type region operates as a source region and the other one operates as a drain region; and a second tunneling field-effect transistor in which one of a second P-type region and a second N-type region operates as a source region and the other one operates as a drain region, the first and second tunneling field-effect transistors being formed in one active region to have the same polarity, the first P-type region and the second N-type region being formed adjacently, the adjacent first P-type region and second N-type region being electrically connected through metal semiconductor alloy film.

Abstract translation: 本发明提供一种由隧穿场效应晶体管构成的集成电路，其包括第一P型区域和第一N型区域中的一个作为源极区域工作的第一隧道场效应晶体管，另一个工作晶体管 作为漏极区域; 以及第二隧道场效应晶体管，其中第二P型区域和第二N型区域中的一个作为源极区域工作，另一个作为漏极区域工作，第一和第二隧道场效应晶体管为 形成在一个有源区中以具有相同的极性，第一P型区和第二N型区相邻形成，相邻的第一P型区和第二N型区通过金属半导体合金膜电连接。