公开(公告)号：US20220037582A1

公开(公告)日：2022-02-03

申请号：US17276464

申请日：2019-11-26

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE TECHNOLOGY

Inventor： Masato UEHARA ,  Hiroshi YAMADA ,  Morito AKIYAMA ,  Sri Ayu ANGGRAINI ,  Kenji HIRATA

IPC: H01L41/113 ,  B81B3/00 ,  H01L41/083 ,  H01L41/04

Abstract: There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.