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公开(公告)号:US12098463B2
公开(公告)日:2024-09-24
申请号:US17583714
申请日:2022-01-25
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Chun-Hu Chen , Ren-Huai Jhang , Chang-Ying Yang
IPC: C23C18/12
CPC classification number: C23C18/1216 , C23C18/1295
Abstract: A method for manufacturing an amorphous multielement metal oxide hydroxide film includes: A liquid mixture is formed by dissolving an oxidizing agent selected from a group consisting of potassium permanganate, potassium chromate, potassium dichromate and potassium ferrate, and a reducing agent in a solvent. The oxidizing agent forms an oxometallate anion having a first metal atom with a first valence number. The reducing agent forms a metal cation having a second metal atom with a third valence number. An amorphous multielement metal oxide hydroxide film is deposited on a substrate by soaking the substrate in the liquid mixture. The amorphous multielement metal oxide hydroxide film includes a multielement metal oxide hydroxide having the first metal atom with a second valence smaller than the first valence number and the second metal atom with a fourth valence number larger than the third valence number.
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公开(公告)号:US20220145467A1
公开(公告)日:2022-05-12
申请号:US17583714
申请日:2022-01-25
Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
Inventor: Chun-Hu Chen , Ren-Huai Jhang , Chang-Ying Yang
IPC: C23C18/12
Abstract: A method for manufacturing an amorphous multielement metal oxide hydroxide film includes: A liquid mixture is formed by dissolving an oxidizing agent selected from a group consisting of potassium permanganate, potassium chromate, potassium dichromate and potassium ferrate, and a reducing agent in a solvent. The oxidizing agent forms an oxometallate anion having a first metal atom with a first valence number. The reducing agent forms a metal cation having a second metal atom with a third valence number. An amorphous multielement metal oxide hydroxide film is deposited on a substrate by soaking the substrate in the liquid mixture. The amorphous multielement metal oxide hydroxide film includes a multielement metal oxide hydroxide having the first metal atom with a second valence smaller than the first valence number and the second metal atom with a fourth valence number larger than the third valence number.
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