公开(公告)号：US11322634B2

公开(公告)日：2022-05-03

申请号：US16311845

申请日：2017-06-21

申请人： NEWSOUTH INNOVATIONS PTY LIMITED

发明人： Xiaojing Hao ,  Fangyang Liu ,  Jialiang Huang ,  Chang Yan ,  Kaiwen Sun ,  Martin Andrew Green

IPC分类号： H01L31/0749 ,  H01L31/032 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/18 ,  H01L21/02

摘要： A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.