公开(公告)号：US20200309730A1

公开(公告)日：2020-10-01

申请号：US16827754

申请日：2020-03-24

Applicant: NGK INSULATORS, LTD.

Inventor： Takashi HINO ,  Atsushi WATANABE ,  Ryo HAYASE

IPC: G01N27/407 ,  G01N27/417 ,  G01N27/406

Abstract: A gas sensor element includes: an element base being a ceramic structure including a sensing part; and a leading-end protective layer being a porous layer disposed around an outer periphery of the element base in a predetermined range on a side of the sensing part. The leading-end protective layer includes: a first layer disposed at least on two main surfaces of the element base; a second layer disposed to cover the end portion and four side surfaces of the element base including the two main surfaces; and a third layer disposed to cover the second layer. The second layer has a porosity of 30% to 80%, and has a thickness of 30 to 50 times thickness of the first layer, and the third layer has a porosity of 15% to 30%, and has a thickness of 5 to 10 times the thickness of the first layer.

公开(公告)号：US20170284958A1

公开(公告)日：2017-10-05

申请号：US15469852

申请日：2017-03-27

Applicant: NGK INSULATORS, LTD.

Inventor： Atsushi WATANABE ,  Takashi SUZUKI ,  Shuichi OZAWA ,  Hirohito KIYOTA ,  Satoko MORIYAMA ,  Shiho IWAI

IPC: G01N27/407

CPC classification number: G01N27/4077 ,  G01N27/4074

Abstract: A sensor element 101 includes an element main body 101a that includes oxygen ion-conductive solid electrolyte layers (1 to 6), and a porous protective layer 90 that covers at least part of the element main body 101a. The porous protective layer 90 includes a porous inner protective layer 92 and a porous outer protective layer 91 disposed on the outer side of the inner protective layer 92 and having a smaller average pore diameter than the inner protective layer 92.

公开(公告)号：US20140290863A1

公开(公告)日：2014-10-02

申请号：US14246639

申请日：2014-04-07

Applicant: NGK Insulators, Ltd.

Inventor： Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA ,  Atsushi WATANABE

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  C04B35/053 ,  C04B35/58 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3865 ,  C04B2235/6586 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/9607 ,  H01L21/6833

Abstract: A ceramic member 30 according to the present invention includes a ceramic base 32, which contains a solid solution Mg(Al)O(N) in which Al and N components are dissolved in magnesium oxide as the main phase, and an electrode 34 disposed on a portion of the ceramic base 32 and containing at least one of nitrides, carbides, carbonitrides, and metals as an electrode component. The ceramic base 32 may have an XRD peak of a (111), (200), or (220) plane of Mg(Al)O(N) measured using a CiKα ray at 2θ=36.9 to 39, 42.9 to 44.8, or 62.3 to 65.2 degrees, respectively, between a magnesium oxide cubic crystal peak and an aluminum nitride cubic crystal peak.

Abstract translation: 根据本发明的陶瓷构件30包括陶瓷基底32，其包含其中Al和N成分溶解在作为主相的氧化镁中的固溶体Mg（Al）O（N）和设置在 陶瓷基体32的一部分并且包含氮化物，碳化物，碳氮化物和金属中的至少一种作为电极组分。 陶瓷基底32可以具有使用2θ时的CiKα射线测量的（111），（200）或（220）面的Mg（Al）O（N）的XRD峰; = 36.9〜39,42.9〜44.8， 或分别为氧化镁立方晶体晶体和氮化铝立方晶体晶体之间的62.3〜65.2度。

公开(公告)号：US20140285943A1

公开(公告)日：2014-09-25

申请号：US14195125

申请日：2014-03-03

Applicant: NGK Insulators, Ltd.

Inventor： Atsushi WATANABE ,  Noboru NISHIMURA

IPC: H01L21/683

CPC classification number: H01L21/6833

Abstract: A member 20 for semiconductor manufacturing equipment includes a base portion 22 and a ceramic member 30 formed on the base portion 22. The ceramic member 30 of the present invention includes a ceramic base 32 containing at least one of magnesium oxide, a magnesium oxide solid solution in which a predetermined component is dissolved in magnesium oxide, and zirconium oxide; and an electrode 34 which is arranged on part of the ceramic base 32 and which contains a ruthenium-aluminum alloy as an electrode component. The ceramic member 30 is a plate-like member and has a structure in which the electrode 34 is embedded therein. The electrode 34 is connected to a feeding member 26 inserted from the underside of the ceramic member 30. Electric power is supplied from the feeding member 26.

Abstract translation: 用于半导体制造设备的构件20包括基部22和形成在基部22上的陶瓷构件30.本发明的陶瓷构件30包括陶瓷基底32，其包含氧化镁，氧化镁固溶体 其中预定组分溶解在氧化镁中，和氧化锆; 以及布置在陶瓷基座32的一部分上并且包含钌铝合金作为电极部件的电极34。 陶瓷构件30是板状构件，并且具有嵌入其中的电极34的结构。 电极34连接到从陶瓷构件30的下侧插入的供给构件26.从供电构件26供给电力。

公开(公告)号：US20210389267A1

公开(公告)日：2021-12-16

申请号：US17411081

申请日：2021-08-25

Applicant: NGK INSULATORS, LTD.

Inventor： Tomoki NAGAE ,  Yoshimasa KONDO ,  Yusuke OGISO ,  Katsunao UENISHI ,  Atsushi WATANABE ,  Ayato KOIZUMI

IPC: G01N27/407

Abstract: A sensor element includes an element body and a porous protective layer arranged to cover a part of a surface of the element body. The protective layer includes an inlet protective layer arranged to cover a gas inlet formed in the surface of the element body, and at least a part of a face included in the surface of the element body, the face on which the gas inlet is opens, and an arithmetic average roughness Rap of an inner peripheral surface of an internal space of the inlet protective layer satisfies at least one of conditions below: the arithmetic average roughness Rap is 8 μm or more, and the arithmetic average roughness Rap is higher than an arithmetic average roughness Rac of a bonding surface of the protective layer, the bonding surface at which the protective layer is bonded to the element body.

公开(公告)号：US20210381999A1

公开(公告)日：2021-12-09

申请号：US17411082

申请日：2021-08-25

Applicant: NGK INSULATORS, LTD.

Inventor： Tomoki NAGAE ,  Yoshimasa KONDO ,  Yusuke OGISO ,  Katsunao UENISHI ,  Atsushi WATANABE ,  Ayato KOIZUMI

IPC: G01N27/407

Abstract: A sensor element includes an element body having a measurement-object gas flow section formed therein, and a porous protective layer arranged to cover first to fifth surfaces of the element body. When an external wall that is the thinnest of parts of an external wall which constitute the element body and extend from the measurement-object gas flow section to the first to fifth surfaces is defined as a thinnest external wall and a surface corresponding to the thinnest external wall is defined as a closest surface, a part of the protective layer which covers the closest surface overlaps the entirety of the thinnest external wall when viewed in a direction perpendicular to the closest surface, and has one or more internal spaces formed therein which overlaps 80% or more of the thinnest external wall when viewed in the direction perpendicular to the closest surface.