公开(公告)号：US20010025599A1

公开(公告)日：2001-10-04

申请号：US09799309

申请日：2001-03-05

申请人： NGK Insulators, Ltd.

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B011/00 ,  C30B017/00 ,  C30B021/06

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A planar seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A planar body 14 is produced following the seed crystal 15. In this case, differences in lattice constants between each crystal axis of the seed crystal 15 and each corresponding crystal axis of the planar body 14 is controlled at 0.1% or less, respectively.

摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。平面晶种15与熔体18接触，然后通过降低晶种从熔炉18的开口13c向下拉。 在籽晶15之后制造平面体14.在这种情况下，晶种15的每个晶轴与平面体14的每个相应的晶轴之间的晶格常数的差分别控制在0.1％以下。

公开(公告)号：US20010018888A1

公开(公告)日：2001-09-06

申请号：US09793193

申请日：2001-02-26

申请人： NGK Insulators, Ltd.

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

摘要： A process is disclosed for producing an oxide single crystal, comprising the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis.

摘要翻译： 公开了一种用于制造氧化物单晶的方法，包括以下步骤：将坩埚内的氧化物的单晶原料熔化，使晶种与所得熔体接触，将氧化物单晶生长下拉 在给定的下拉轴中熔化通过坩埚的开口，并固定地保持晶种，然后将用于将单晶生长选择的晶种的给定晶体取向的角度减小到下拉轴。

公开(公告)号：US20020007780A1

公开(公告)日：2002-01-24

申请号：US09854924

申请日：2001-05-14

申请人： NGK Insulators, Ltd.

发明人： Toshihisa Yokoyama ,  Ken-Ichi Noda ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B021/06 ,  C30B015/00 ,  C30B027/02 ,  C30B030/04 ,  C30B028/10 ,  C30B001/00

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

摘要： A planar body of an oxide single crystal having a good crystallinity is grown stably to prevent cracks in the crystal when the planar body of the oxide single crystal is grown with a null pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A seed crystal 15 is contacted to a melt 8. An oxide single crystal 31 is grown by pulling down the seed crystal 15 to draw the melt from an opening 13c of the crucible 7. A cooler is provided under the opening 13c of the crucible 7, which cool the oxide single crystal drawn from the opening of the crucible.

摘要翻译： 稳定地生长具有良好结晶度的氧化物单晶的平面体，以防止在以mu拉下法生长氧化物单晶的平面体时晶体中的裂纹。 氧化物单晶的原料在坩埚7中熔化。晶种15与熔体8接触。通过将晶种15拉下来从熔融金属8的开口13c拉出熔体，从而生长氧化物单晶31。 坩埚7.在坩埚7的开口13c的下方设置有冷却器，其冷却从坩埚的开口拉出的氧化物单晶。

公开(公告)号：US20010018887A1

公开(公告)日：2001-09-06

申请号：US09780824

申请日：2001-02-09

申请人： NGK Insulators, Ltd.

发明人： Masahiro Murasato ,  Akihiko Honda ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/00 ,  C30B29/30

摘要： In a process for producing a raw material powder comprising lithium potassium niobate for growing a single crystal of lithium potassium niobate, starting raw materials comprising lithium carbonate powder, potassium carbonate powder and niobium pentoxide powder are mixed in a solvent, lithium carbonate powder and potassium carbonate powder are entirely dissolved into the solvent, lithium carbonate and potassium carbonate are deposited around niobium pentoxide powder by spray-drying the mixture to obtain granulated powder, and then the granulated powder is thermally treated to produce the raw material powder.

摘要翻译： 在生产含铌酸锂钾单晶的铌酸锂钾的原料粉末的制造方法中，将碳酸锂粉末，碳酸钾粉末和五氧化二铌粉末的原料混合在溶剂，碳酸锂粉末和碳酸钾中 将粉末完全溶解于溶剂中，通过喷雾干燥该混合物将碳酸锂和碳酸钾沉积在五氧化二铌粉末周围，得到造粒粉末，然后将造粒粉末进行热处理以制备原料粉末。

公开(公告)号：US20010020436A1

公开(公告)日：2001-09-13

申请号：US09798750

申请日：2001-03-02

申请人： NGK Insulators, Ltd.

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B015/00

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。将纤维状晶种15与熔体18接触，然后通过降低晶种将熔体18从坩埚7的开口13c拉下。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。