公开(公告)号：US20040255847A1

公开(公告)日：2004-12-23

申请号：US10465528

申请日：2003-06-19

申请人： MEMC Electronic Materials, Inc.

发明人： Carl F. Cherko ,  Robert D. Cook

IPC分类号： C30B035/00 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B15/00 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/106 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage through a wall of the housing for passage of fluid. The fluid sealing system includes a fluid connector head adapted for connection to the fluid passage and to the fluid flow path to establish fluid communication between the fluid flow path and the outside of the housing. The head has a port adapted for fluid communication with the fluid passage through the wall of the housing. First and second seals around the port are adapted for sealing engagement with the head. A space is defined generally between the first and second seals, and a leak detector is arranged to monitor the space for detecting fluid leakage past at least one of the seals.

摘要翻译： 提供流体密封系统用于晶体拉出器中用于生长单晶锭。 晶体拉出器具有壳体，容纳在壳体中的流体流路，以及通过壳体的壁的流体通道，用于流体流通。 流体密封系统包括适于连接到流体通道和流体流动路径的流体连接器头，以在流体流动路径和壳体的外部之间建立流体连通。 头部具有适于与通过壳体的壁的流体通道流体连通的端口。 端口周围的第一和第二密封件适于与头部进行密封接合。 通常在第一和第二密封件之间限定空间，并且设置泄漏检测器以监测用于检测通过至少一个密封件的流体泄漏的空间。

公开(公告)号：US20040226504A1

公开(公告)日：2004-11-18

申请号：US10829231

申请日：2004-04-22

发明人： Katsunori Nakashima ,  Tatsuya Yabusame ,  Fumio Yamanaka

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/02 ,  Y10T117/1032 ,  Y10T117/1056

摘要： In supplying crystalline materials in the Czochralski method, it is made use of an apparatus equipped with an inner vessel having an opening portion at the lower part or bottom thereof, which is to be charged with a granular solid material, an outer vessel containg the inner vessel therein with the function of sliding movement and thus closing the opening portion, and pull-up means for suspending the inner vessel and outer vessel in a manner causing them to ascend or descend, wherein the opening portion is opened through a sliding motion of the inner vessel or outer vessel for additional charging or recharging of the solid material into the molten material in the crucible, with the result that the molten material in the crucible can be prevented from splashing, the additional charging can be carried out in a static manner, the material cost becomes low and there is no risk of cracking due to rapid heating. Further, the productivity in silicon single crystal growing can be improved, the crucible can be used efficiently and the life of the furnace parts can be prolonged and, as a result, the cost of silicon single crystal growing can be markedly reduced.

摘要翻译： 在以切克劳斯基法提供结晶材料的过程中，使用装有内容器的装置，该容器的下部或底部具有开口部分，该内部容器装有粒状固体材料，外部容器包含内部 容器在其中具有滑动运动并因此封闭开口部分的功能;以及上拉装置，用于以使其上升或下降的方式悬挂内部容器和外部容器，其中通过滑动运动打开开口部分 内部容器或外部容器，用于将固体材料进一步加入或再填充到坩埚中的熔融材料中，结果可以防止坩埚中的熔融材料飞溅，附加充电可以以静态方式进行， 材料成本变低，由于加热快，不存在开裂的风险。 此外，可以提高硅单晶生长的生产率，可以有效地利用坩埚，并且可以延长炉部件的寿命，结果，可以显着降低硅单晶生长的成本。

公开(公告)号：US20040226317A1

公开(公告)日：2004-11-18

申请号：US10846785

申请日：2004-05-12

申请人： SGL Carbon AG

发明人： Dieter Kompalik

IPC分类号： C30B035/00 ,  C03C027/02 ,  C30B001/00 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/10 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1052

摘要： In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials, carbon fiber-reinforced carbon (CFC), combinations thereof or carbon materials coated with silicon carbide (SiC) are used. The working life of a CFC support crucible can be extended by a partial thickening of the support crucible walls affected by corrosion processes.

摘要翻译： 为了通过切克劳斯基（Czochralski）法拉制半导体单晶，使用了需要具有高温能力的支撑坩埚的石英玻璃坩埚。 这种支撑坩埚可以由各种材料制成，在这种情况下，使用石墨材料，碳纤维增强碳（CFC），其组合或碳化硅（SiC）涂覆的碳材料。 通过受腐蚀过程影响的支撑坩埚壁的部分增厚，可以延长CFC支撑坩埚的工作寿命。

公开(公告)号：US20040168625A1

公开(公告)日：2004-09-02

申请号：US10793539

申请日：2004-03-04

申请人： RWE Schott Solar, Inc.

发明人： Bernhard P. Piwczyk

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B030/04 ,  C30B028/10

CPC分类号： C30B15/34 ,  C30B15/04

摘要： An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.

摘要翻译： 用硼原子涂布硅的廉价方法包括（1）将硅射入浸渍在包含硼酸和聚乙烯醇的水溶液中，和（2）加热溶液以蒸发水并形成含有硼的聚合的聚乙烯醇涂层 在射击 然后可以将精确量的该涂覆的射击物与测量量的本征硅粒料混合，然后可将所得混合物熔化以提供硼掺杂硅熔体，用于生长可转化为底物的p型硅体 用于光伏太阳能电池。

公开(公告)号：US20040112278A1

公开(公告)日：2004-06-17

申请号：US10468833

申请日：2004-01-26

发明人： Hiroshi Yoshida ,  Kazunori Satoh

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B29/403 ,  C30B29/406

摘要： Disclosed is a Group II-VI or III-V compound-based single-crystal ferromagnetic material, wherein at least one transition metal selected from the group consisting of V and Cr is substituted for or for the Group II element of a Group II-VI compound selected from the group consisting of ZnTe, ZnSe, ZnS, CdTe, CdSe and CdS, or for the Group III element of a Group III-V compound selected from the group consisting of GsAs, InAs, Inp and GaP, to form a mixed crystal. Further, at least one transition metal selected from the group consisting of V, Cr and Mn is substituted for the Group III element of a Group III-V compound selected from the group consisting of GaN, AlN, InN and BN, to form a mixed crystal. Another transition metal element or n-type or p-type dopant is added to adjust ferromagnetic transition temperature or another ferromagnetic characteristic.

摘要翻译： 公开了II-VI族或III-V族化合物的单晶铁磁材料，其中至少一种选自V和Cr的过渡金属代替II-VI族的II族元素 选自ZnTe，ZnSe，ZnS，CdTe，CdSe和CdS的化合物或选自GAs，InAs，Inp和GaP的III-V族化合物的III族元素，以形成混合 水晶。 此外，选自由V，Cr和Mn组成的组中的至少一种过渡金属代替选自GaN，AlN，InN和BN的III-V族化合物的III族元素，以形成混合 水晶。 添加另一种过渡金属元素或n型或p型掺杂剂以调节铁磁转变温度或另一种铁磁特性。

公开(公告)号：US20040107894A1

公开(公告)日：2004-06-10

申请号：US10448343

申请日：2003-05-30

申请人： KABUSHIKI KAISHA TOSHIBA, Tokyo, Japan

发明人： Tsutomu Shimonosono ,  Yoshihiro Koguchi ,  Takashi Sasaki

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B001/00

CPC分类号： C30B15/305 ,  H01F6/00 ,  Y10S117/917 ,  Y10T117/1004 ,  Y10T117/1052 ,  Y10T117/1072

摘要： A single crystal pulling device is composed of a cylindrical pulling furnace, a crucible disposed in the pulling furnace in which a single crystal material for a semiconductor is poured, a cylindrical vacuum vessel coaxially disposed around the pulling furnace, and a superconducting magnet composed of a plurality pairs of coils arranged inside the vacuum vessel so as to generate magnetic field. The superconducting coils are arranged on the same horizontal plane of the cylindrical vacuum vessel, and each of the paired superconducting coils includes coils set so as to oppose to each other with respect to a central axis of the cylindrical vacuum vessel so that one coil of one pair of coils and one coil of another pair of coils adjacent to that one pair of coils constitutes a set angle, directing towards the inside of the cylindrical vessel, in a range of 100null to 130null.

摘要翻译： 单晶拉制装置由圆柱形拉制炉，设置在其中注入半导体用单晶材料的拉制炉内的坩埚，同时设置在拉式炉周围的圆筒形真空容器，以及由 多个线圈布置在真空容器内，以产生磁场。 超导线圈被布置在圆柱形真空容器的相同的水平平面上，并且成对的超导线圈中的每一个包括相对于圆柱形真空容器的中心轴彼此相对的线圈，使得一个线圈的一个 一对线圈和与该一对线圈相邻的另一对线圈的一个线圈构成在100°至130°的范围内朝向圆柱形容器的内部的设定角度。

公开(公告)号：US20040089225A1

公开(公告)日：2004-05-13

申请号：US10703576

申请日：2003-11-10

发明人： Toshiaki Ono ,  Tadami Tanaka ,  Masataka Hourai

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B25/20 ,  Y10T428/21

摘要： A silicon wafer is doped with boron and germanium in a range that satisfies a relational expression defined by: null0.8null10null3null4.64null10null24nullnullGenullnull2.69null10null23nullnullBnullnull1.5null10null3. This can reduce the miss-fit dislocation which might be induced when an epitaxial layer is grown over the silicon wafer that has been added with boron in high concentration. It is to be noted that in the above relational expression, the nullBnull denotes a boron concentration, while the nullGenull denotes a germanium concentration and a concentration unit is indicated by atoms/cm3.

摘要翻译： 在满足以下关系式的范围内掺杂硼和锗的硅晶片：-0.8×10-3×4.64×1024×[Ge] -2.69×10-3×[B] <= 1.5X10 -3。 这可以减少当外延层在已经加入高浓度的硼的硅晶片上生长时可能引起的错配配合位错。 应当注意，在上述关系式中，[B]表示硼浓度，而[Ge]表示锗浓度，浓度单位由原子/ cm 3表示。

公开(公告)号：US20040069214A1

公开(公告)日：2004-04-15

申请号：US10318099

申请日：2002-12-13

发明人： Ill Soo Choi ,  Hyun Kyo Choi

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/04 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1064 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed and a low melting point dopant being loaded inside the low melting point dopant feeding instrument. The method includes the steps of loading a low melting point dopant inside a low melting point dopant feeding instrument having vacuum-tight sealed sidewall and upper portions and an open bottom portion with net-like structure having many holes, and dipping the bottom portion of the low melting point dopant feeding instrument in a molten silicon liquid contained inside a quartz crucible. The low melting point dopant is directly dissolved in the molten silicon liquid or evaporated and then finally dissolved in the form of a gas phase into the molten silicon liquid through the open holes of the bottom portion of the melting point dopant feeding instrument.

摘要翻译： 一种补充有低熔点掺杂剂进料装置的硅单晶生长装置和一种低熔点掺杂剂进料方法，用于生产具有低熔点掺杂剂的重掺杂硅单晶。 该装置包括含有熔融硅液体的石英坩埚，向石英坩埚提供辐射热的加热单元，从包含在石英坩埚中的熔融硅液体中提取硅单晶的晶体拉升机和低熔点掺杂剂 喂食器具。 低熔点掺杂剂供给装置包括侧壁部分，上部和具有多个孔的网状结构的开口底部，侧壁和上部是真空密封的，并且低熔点掺杂剂被加载在 低熔点掺杂剂进料仪。 该方法包括以下步骤：在具有真空密封的侧壁和上部的低熔点掺杂剂进料装置中装载低熔点掺杂剂，并且具有具有许多孔的网状结构的开口底部，并将 低熔点掺杂剂供给装置包含在石英坩埚内的熔融硅液中。 将低熔点掺杂剂直接溶解在熔融硅液体中或蒸发，然后最终以气相的形式通过熔点掺杂剂进料装置底部的开口孔熔化到熔融硅液中。

公开(公告)号：US20040069211A1

公开(公告)日：2004-04-15

申请号：US10467770

申请日：2003-08-12

发明人： Sabin Boily ,  Pascal Tessier ,  Houshang Alamdari

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B1/12 ,  C30B29/32 ,  Y10T117/1068

摘要： The invention is concerned with a method of forming a single crystal of a ceramic, semiconductive or magnetic material. The method according to the invention comprises the steps of (a) compacting a nanocrystalline powder comprising particles having an average particle size of 0.05 to 20 nullm and each formed of an agglomerate of grains with each grain comprising a nanocrystal of a ceramic, semiconductive or magnetic material; and (b) sintering the compacted powder obtained in step (a) at a temperature sufficient to cause an exaggerated growth of at least one of the grains, thereby obtaining at least one single crystal of aforesaid material. Instead of sintering the compacted powder, it is also possible to contact same with a template crystal of the aforesaid material, and to heat the compacted powder and template crystal in contact with one another so as to cause a sustained directional growth of the template crystal into the compacted powder, thereby obtaining a single crystal having a size larger than the template crystal. By using nanocrystalline powders, the temperature of operation for crystal growth is reduced, the rate of crystal growth increases, and crystals with large size and with very little or no porosity or inclusions can be obtained.

摘要翻译： 本发明涉及形成陶瓷，半导体或磁性材料的单晶的方法。 根据本发明的方法包括以下步骤：（a）压制包含平均粒度为0.05至20μm的颗粒的纳米晶体粉末，并且每个由颗粒团聚体形成，每个颗粒包含陶瓷纳米晶体，半导体或磁性 材料; 和（b）在足以引起至少一种晶粒的夸张生长的温度下烧结在步骤（a）中获得的压实粉末，从而获得至少一种上述材料的单晶。 代替烧结压实的粉末，也可以与上述材料的模板晶体接触，并且将压实的粉末和模板晶体彼此接触加热，以使模板晶体持续的方向生长 压实粉末，从而获得尺寸大于模板晶体的单晶。 通过使用纳米晶体粉末，晶体生长的操作温度降低，晶体生长速率增加，并且可以获得具有大尺寸和很少或没有孔隙率或夹杂物的晶体。

公开(公告)号：US20040055531A1

公开(公告)日：2004-03-25

申请号：US10252027

申请日：2002-09-20

申请人： MEMC Electronic Materials, Inc.

发明人： Lee W. Ferry ,  Richard G. Schrenker ,  Hariprasad Sreedharamurthy

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.