公开(公告)号：US20200273905A1

公开(公告)日：2020-08-27

申请号：US16797166

申请日：2020-02-21

Applicant: NICHIA CORPORATION

Inventor： Hirofumi NISHIYAMA ,  Seiichi HAYASHI ,  Toshinori WADA

IPC: H01L27/15 ,  H01L33/00

Abstract: A method for manufacturing a light-emitting element comprises: forming a mask comprising a first film and a second film such that the mask covers a first active layer and a second nitride semiconductor layer, which comprises: forming the first film covering at least an upper surface of the second nitride semiconductor layer, and forming the second film covering the first film; while the first active layer and the second nitride semiconductor layer are covered with the mask, forming a third nitride semiconductor layer at an exposed portion of a first nitride semiconductor layer, wherein a temperature at which the third nitride semiconductor layer is formed is less than a melting point of the second film; and after the forming of the third nitride semiconductor layer, removing the mask, during which lift-off of the mask is performed by removing the first film, which also removes the second film.