公开(公告)号：US20230006100A1

公开(公告)日：2023-01-05

申请号：US17850585

申请日：2022-06-27

Applicant: NICHIA CORPORATION

Inventor： Hidetoshi TANAKA ,  Hirofumi NISHIYAMA ,  Kentaro YAGI

IPC: H01L33/32 ,  H01L33/38

Abstract: A stacked body includes a long side and a short side in a top view. The long side extends in a first direction. The short side extends in a second direction orthogonal to the first direction. The short side is shorter than the long side. A light emission peak wavelength of a first active layer is different from a light emission peak wavelength of a second active layer. A first n-type layer includes a first n-side contact portion contacting a first electrode. A second n-type layer includes a second n-side contact portion contacting a second electrode. In a top view, a center of the first n-side contact portion is separated from a first line that passes through a center of the second n-side contact portion and is parallel to the first direction.

公开(公告)号：US20220158033A1

公开(公告)日：2022-05-19

申请号：US17525230

申请日：2021-11-12

Applicant: NICHIA CORPORATION

Inventor： Hirofumi NISHIYAMA ,  Shunsuke MINATO

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L33/00

Abstract: A light emitting element includes a first light emitting portion and a second light emitting portion. The first light emitting portion includes a first stacked body having a first n-type layer, a first active layer, a first p-type layer, a first tunnel junction layer, and a second n-type layer. The second light emitting portion includes a second stacked body having a third n-type layer, a second p-type layer, a second tunnel junction layer, a fourth n-type layer, a second active layer, a third p-type layer, and a transmissive conductive film. A resistivity of the second n-type layer is higher than a resistivity of the transmissive conductive film. A thickness of the second n-type layer is larger than a thickness of the transmissive conductive film.

公开(公告)号：US20210367096A1

公开(公告)日：2021-11-25

申请号：US17321973

申请日：2021-05-17

Applicant: NICHIA CORPORATION

Inventor： Hirofumi NISHIYAMA

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/54 ,  H01L33/50 ,  H01L23/00 ,  H01L25/16

Abstract: A method includes: bonding a surface of a first wafer on a side having a semiconductor layer to a surface of a second wafer on a side having a first electrode to electrically connect the semiconductor layer and the first electrode; etching a silicon substrate such that a first portion of the silicon substrate remains in a region overlapping with the first electrode in a plan view; etching the semiconductor layer using the first portion as a mask such that a portion of the semiconductor layer between the first portion and the first electrode remains as at least one light-emitting portion; forming a resin layer to cover a lateral surface of the first portion and a lateral surface of the light-emitting portion with the resin layer; removing the first portion to expose the light-emitting portion; and forming a light-transmissive electrically conductive film on or above the light-emitting portion.

公开(公告)号：US20210305219A1

公开(公告)日：2021-09-30

申请号：US17216324

申请日：2021-03-29

Applicant: NICHIA CORPORATION

Inventor： Hirofumi NISHIYAMA

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A method of manufacturing the light-emitting device includes providing a structure body, mounting the structure body, removing a third substrate region of a silicon substrate of the structure body, disposing a resin layer, disposing a first mask member, removing a first substrate region of the silicon substrate, disposing a first wavelength conversion layer, removing the first mask member, and removing a second substrate region of the silicon substrate.

公开(公告)号：US20200273905A1

公开(公告)日：2020-08-27

申请号：US16797166

申请日：2020-02-21

Applicant: NICHIA CORPORATION

Inventor： Hirofumi NISHIYAMA ,  Seiichi HAYASHI ,  Toshinori WADA

IPC: H01L27/15 ,  H01L33/00

Abstract: A method for manufacturing a light-emitting element comprises: forming a mask comprising a first film and a second film such that the mask covers a first active layer and a second nitride semiconductor layer, which comprises: forming the first film covering at least an upper surface of the second nitride semiconductor layer, and forming the second film covering the first film; while the first active layer and the second nitride semiconductor layer are covered with the mask, forming a third nitride semiconductor layer at an exposed portion of a first nitride semiconductor layer, wherein a temperature at which the third nitride semiconductor layer is formed is less than a melting point of the second film; and after the forming of the third nitride semiconductor layer, removing the mask, during which lift-off of the mask is performed by removing the first film, which also removes the second film.

公开(公告)号：US20190319065A1

公开(公告)日：2019-10-17

申请号：US16455549

申请日：2019-06-27

Applicant: NICHIA CORPORATION

Inventor： Shinichi DAIKOKU ,  Hirofumi NISHIYAMA

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/46 ,  H01L33/60

Abstract: A method of manufacturing a light emitting device includes: providing a wafer that comprises: a supporting substrate, and a plurality of light emitting structures arranged in a two-dimensional array on a first principal surface of the supporting substrate along a first direction and a second direction, each of the plurality of light emitting structures comprising a first semiconductor layer, which includes a first region and a second region, and a second semiconductor layer, which covers the second region of the first semiconductor layer, wherein the plurality of light emitting structures includes a first light emitting structure and a second light emitting structure; forming a recess in the first principal surface of the supporting substrate between the first light emitting structure and the second light emitting structure; forming a resin layer in the recess; and removing the supporting substrate so as to expose the first semiconductor layer.

公开(公告)号：US20180247973A1

公开(公告)日：2018-08-30

申请号：US15906912

申请日：2018-02-27

Applicant: NICHIA CORPORATION

Inventor： Shinichi DAIKOKU ,  Hirofumi NISHIYAMA

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/62 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L27/156 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/502 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method of manufacturing a light emitting device includes: (a) providing a wafer that includes a plurality of light emitting structures, each including a first and second semiconductor layer; (b) forming a first insulating layer so as to cover the light emitting structures and define first and second through-holes corresponding to a respective one of the light emitting structures; (c) forming electrically-conductive structures, each electrically connected with a respective one of the first semiconductor layers and first wirings, each electrically connected with a column of the second semiconductor layers aligned in a second direction; (d) forming a second insulating layer so as to cover the first wirings, the second insulating layer defining third through-holes each disposed above a respective one of the first electrically-conductive structures; and (e) forming second wirings, each electrically connected with a row the first electrically-conductive structures aligned in a first direction.