公开(公告)号：US20220266396A1

公开(公告)日：2022-08-25

申请号：US17628842

申请日：2020-11-12

申请人： NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. ,  NIPPON MICROMETAL CORPORATION

发明人： Tetsuya OYAMADA ,  Tomohiro UNO ,  Daizo ODA ,  Motoki ETO ,  Takumi OHKABE

IPC分类号： B23K35/30 ,  H01L23/00 ,  C22C5/06

摘要： An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.

公开(公告)号：US20220108971A1

公开(公告)日：2022-04-07

申请号：US17553275

申请日：2021-12-16

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.

发明人： Daizo ODA ,  Takumi OHKABE ,  Teruo HAIBARA ,  Takashi YAMADA ,  Tetsuya OYAMADA ,  Tomohiro UNO

IPC分类号： H01L23/00 ,  C22C5/10 ,  C22C5/06

摘要： Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

公开(公告)号：US20180374816A1

公开(公告)日：2018-12-27

申请号：US16067120

申请日：2016-09-23

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Daizo ODA ,  Takumi OHKABE ,  Teruo HAIBARA ,  Takashi YAMADA ,  Tetsuya OYAMADA ,  Tomohiro UNO

IPC分类号： H01L23/00 ,  C22C5/10

摘要： The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.