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1.发明授权Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices 有权薄膜磁头，磁头滑块和硬盘驱动器件的基板公开(公告)号：US09293156B2
公开(公告)日：2016-03-22
申请号：US14752157
申请日：2015-06-26
CPC分类号： G11B5/10 , G11B5/105 , G11B5/3106 , G11B5/3163 , G11B5/3169 , G11B5/3173 , G11B5/6005
摘要： An AlTiC-based substrate suitable for a thin-film magnetic head is provided. The Al2O3—TiC based substrate for a thin-film magnetic head including an Al2O3 phase and a TiC phase, wherein a c-axis lattice constant of the Al2O3 phase is 12.992 Å or more and 12.998 Å or less, and a lattice constant of the TiC phase is 4.317 Å or more and 4.325 Å or less.
摘要翻译： 提供了适用于薄膜磁头的基于AlTiC的基板。 用于包括Al 2 O 3相和TiC相的薄膜磁头的Al 2 O 3 -TiC基基底，其中Al 2 O 3相的c轴晶格常数为12.992以上12.998以下， TiC相为4.317以上且4.3以上。
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2.发明授权Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices 有权薄膜磁头，磁头滑块和硬盘驱动器件的基板公开(公告)号：US09293154B2
公开(公告)日：2016-03-22
申请号：US14751184
申请日：2015-06-26
CPC分类号： G11B5/10 , G11B5/102 , G11B5/3169 , G11B5/3173
摘要： An AlTiC-based substrate suitable for a thin-film magnetic head is provided. The Al2O3—TiC based substrate for a thin-film magnetic head including an Al2O3 phase and a TiC phase, wherein a c-axis lattice constant of the Al2O3 phase is 12.992 Å or more and 12.998 Å or less, and a lattice constant of the TiC phase is 4.297 Å or more and 4.315 Å or less.
摘要翻译： 提供了适用于薄膜磁头的基于AlTiC的基板。 用于包括Al 2 O 3相和TiC相的薄膜磁头的Al 2 O 3 -TiC基基底，其中Al 2 O 3相的c轴晶格常数为12.992以上12.998以下， TiC相为4.297以上且4.315以下。
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3.发明授权Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices 有权薄膜磁头，磁头滑块和硬盘驱动器件的基板公开(公告)号：US09293155B2
公开(公告)日：2016-03-22
申请号：US14751189
申请日：2015-06-26
CPC分类号： G11B5/10 , G11B5/105 , G11B5/3136 , G11B5/3173
摘要： An AlTiC-based substrate suitable for a thin-film magnetic head is provided. The Al2O3—TiC based substrate for a thin-film magnetic head including an Al2O3 phase and a TiC phase, wherein a c-axis lattice constant of the Al2O3 phase is 12.985 Å or more and 12.992 Å or less, and a lattice constant of the TiC phase is 4.297 Å or more and 4.325 Å or less.
摘要翻译： 提供了适用于薄膜磁头的基于AlTiC的基板。 用于包含Al 2 O 3相和TiC相的薄膜磁头的Al 2 O 3 -TiC基基材，其中Al 2 O 3相的c轴晶格常数为12.985以上12.992以下，晶格常数 TiC相为4.297以上至4.325以下。
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4.发明申请SUBSTRATES FOR THIN-FILM MAGNETIC HEADS, MAGNETIC HEAD SLIDERS, AND HARD DISK DRIVE DEVICES 有权薄膜磁头，磁头滑块和硬盘驱动装置的基板公开(公告)号：US20150380025A1
公开(公告)日：2015-12-31
申请号：US14752157
申请日：2015-06-26
CPC分类号： G11B5/10 , G11B5/105 , G11B5/3106 , G11B5/3163 , G11B5/3169 , G11B5/3173 , G11B5/6005
摘要： An AlTiC-based substrate suitable for a thin-film magnetic head is provided. The Al2O3—TiC based substrate for a thin-film magnetic head including an Al2O3 phase and a TiC phase, wherein a c-axis lattice constant of the Al2O3 phase is 12.992 Å or more and 12.998 Å or less, and a lattice constant of the TiC phase is 4.317 Å or more and 4.325 Å or less.
摘要翻译： 提供了适用于薄膜磁头的基于AlTiC的基板。 用于包括Al 2 O 3相和TiC相的薄膜磁头的Al 2 O 3 -TiC基基板，其中Al 2 O 3相的c轴晶格常数为12.992以上且12.998以下， TiC相为4.317以上且4.3以上。
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