公开(公告)号：US20220189736A1

公开(公告)日：2022-06-16

申请号：US17468879

申请日：2021-09-08

申请人： NISSIN ION EQUIPMENT CO., LTD.

发明人： Jian WANG ,  Shinsuke Inoue ,  Yuta Iwanami ,  Takashi Sakamoto ,  Weijiang Zhao

IPC分类号： H01J37/317 ,  H01J37/20 ,  H01J37/304

摘要： An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.