公开(公告)号：US20160005912A1

公开(公告)日：2016-01-07

申请号：US14766066

申请日：2014-01-24

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroto NISHII ,  Taichi WATANABE ,  Seiki TERAJI ,  Kazunori KAWAMURA ,  Takashi MINEMOTO ,  Jakapan CHANTANA ,  Masashi MURATA

IPC: H01L31/0749 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L21/02568 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/18 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: The present invention provides a CIGS film production method which ensures that a CIGS film excellent in conversion efficiency can be produced at lower costs with higher reproducibility, and a CIGS solar cell production method using the CIGS film production method. The CIGS film production method includes: a stacking step of stacking an (A) layer containing indium, gallium and selenium and a (B) layer containing copper and selenium in this order in a solid phase over a substrate while heating at a temperature of higher than 250° C. and not higher than 400° C.; and a heating step of further heating the resulting stack of the (A) layer and the (B) layer to melt a compound of copper and selenium in the (B) layer into a liquid phase, whereby copper is diffused from the (B) layer into the (A) layer to cause crystal growth to provide a CIGS film.

Abstract translation: 本发明提供一种CIGS膜制造方法，其能够以更高的再现性以较低的成本制造转换效率优异的CIGS膜，以及使用CIGS膜制造方法的CIGS太阳能电池的制造方法。 CIGS膜的制造方法包括：堆叠步骤，在含有铟，镓和硒的（A）层和含有铜和硒的（B）层的同时，在固相中层叠基板，同时在较高温度下加热 超过250℃，不高于400℃。 以及加热步骤，进一步加热所得到的（A）层和（B）层的叠层，以将（B）层中的铜和硒的化合物熔融成液相，由此从（B）层扩散铜， 层进入（A）层以引起晶体生长以提供CIGS膜。