公开(公告)号：US12236364B2

公开(公告)日：2025-02-25

申请号：US18369221

申请日：2023-09-18

Applicant: NOVA LTD

Inventor： Eitan Rothstein ,  Ilya Rubinovich ,  Noam Tal ,  Barak Bringoltz ,  Yongha Kim ,  Ariel Broitman ,  Oded Cohen ,  Eylon Rabinovich ,  Tal Zaharoni ,  Shay Yogev ,  Daniel Kandel

IPC: G06N5/04 ,  G01B11/06 ,  G03F7/00 ,  G06N20/00 ,  H01L21/66 ,  H01L21/68

Abstract: A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.

公开(公告)号：US11815819B2

公开(公告)日：2023-11-14

申请号：US17995706

申请日：2021-04-06

Applicant: NOVA LTD.

Inventor： Barak Bringoltz ,  Ran Yacoby ,  Noam Tal ,  Shay Yogev ,  Boaz Sturlesi ,  Oded Cohen

IPC: G05B13/02 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70508 ,  G03F7/705 ,  G03F7/70525 ,  G05B13/0265 ,  G05B2219/2602 ,  G05B2219/45031

Abstract: A system and methods for Advance Process Control (APC) in semiconductor manufacturing include: for each of a plurality of waiter sites, receiving a pre-process set of scatterometric training data, measured before implementation of a processing step, receiving a corresponding post-process set of scatterometric training data measured after implementation of the process step, and receiving a set of process control knob training data indicative of process control knob settings applied during implementation of the process step; and generating a machine learning model correlating variations in the pre-process sets of scatterometric training data and the corresponding process control knob training data with the corresponding post-process sets of scatterometric training data, to train the machine learning model to recommend changes to process control knob settings to compensate for variations in the pre-process scatterometric data.

公开(公告)号：US11763181B2

公开(公告)日：2023-09-19

申请号：US17400157

申请日：2021-08-12

Applicant: NOVA LTD

Inventor： Eitan Rothstein ,  Ilya Rubinovich ,  Noam Tal ,  Barak Bringoltz ,  Yongha Kim ,  Ariel Broitman ,  Oded Cohen ,  Eylon Rabinovich ,  Tal Zaharoni ,  Shay Yogev ,  Daniel Kandel

IPC: G06N5/04 ,  H01L21/66 ,  G06N20/00 ,  G01B11/06 ,  G03F7/00 ,  H01L21/68

CPC classification number: G06N5/04 ,  G01B11/06 ,  G03F7/705 ,  G03F7/70616 ,  G06N20/00 ,  H01L21/681 ,  H01L22/26 ,  G01B2210/56

Abstract: A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.

公开(公告)号：US11639901B2

公开(公告)日：2023-05-02

申请号：US17498013

申请日：2021-10-11

Applicant: NOVA LTD

Inventor： Gilad Barak ,  Oded Cohen ,  Igor Turovets

IPC: G01N21/956 ,  H01L21/66 ,  G03F7/20 ,  G01N21/88 ,  G01N21/95

Abstract: A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure having a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.

公开(公告)号：US11143601B2

公开(公告)日：2021-10-12

申请号：US16558212

申请日：2019-09-02

Applicant: NOVA LTD.

Inventor： Gilad Barak ,  Oded Cohen ,  Igor Turovets

IPC: G01N21/956 ,  H01L21/66 ,  G03F7/20 ,  G01N21/88 ,  G01N21/95

Abstract: A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure comprising a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.