公开(公告)号：US20170077291A1

公开(公告)日：2017-03-16

申请号：US15233834

申请日：2016-08-10

Applicant: NXP B.V.

Inventor： Steven Thomas Peake ,  Philip Rutter ,  Chris Rogers

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/265 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L21/26513 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/66734

Abstract: A semiconductor device and a method of making a semiconductor device. The device includes a semiconductor substrate having a first conductivity type, a layer of doped silicon located on the substrate, a trench extending into the layer of silicon, and a gate electrode and gate dielectric located in the trench. The device also includes a drain region, a body region having a second conductivity type located adjacent the trench and above the drain region, and a source region having the first conductivity type located adjacent the trench and above the body region. The layer of doped silicon in a region located beneath the body region includes donor ions and acceptor ions forming a net doping concentration within said region by compensation. The net doping concentration of the layer of doped silicon as a function of depth has a minimum in a region located immediately beneath the body region.

Abstract translation: 半导体器件和制造半导体器件的方法。 该器件包括具有第一导电类型的半导体衬底，位于衬底上的掺杂硅层，延伸到硅层中的沟槽以及位于沟槽中的栅电极和栅极电介质。 器件还包括漏极区域，具有位于沟槽附近并位于漏极区域之上的具有第二导电类型的体区域，以及具有位于沟槽附近并位于身体区域上方的具有第一导电类型的源极区域。 位于身体区域下方的区域中的掺杂硅层包括通过补偿在所述区域内形成净掺杂浓度的施主离子和受体离子。 作为深度的函数的掺杂硅层的净掺杂浓度在位于身体区域正下方的区域中具有最小值。