公开(公告)号：US20220399234A1

公开(公告)日：2022-12-15

申请号：US17347843

申请日：2021-06-15

Applicant: NXP B.V.

Inventor： WeiCheng Chuang ,  PaoTung Pan ,  Che Lun Cheng ,  Yao Jung Chang ,  Yu-Wen Chu ,  Chun-Hui Lee ,  Che-Kai Hsu ,  Kuan Lin Huang

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683 ,  H01L23/544 ,  H01L23/00 ,  H01L23/58

Abstract: A method of semiconductor die singulation is provided. The method includes forming a first trench along a singulation lane of a semiconductor wafer. A second trench is formed extending from a bottom of the first trench. A portion of the semiconductor wafer remains between a bottom of the second trench and a backside of the semiconductor wafer. A cut is formed by way of a laser to singulate die of the semiconductor wafer. The cut extends through the portion of the semiconductor wafer remaining between the bottom of the second trench and the backside of the semiconductor wafer.